Terahertz photoconductivity of mobile electrons in nanoporous InP honeycombs
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LLOYD-HUGHES, James; MERCHANT, S. K.E.; SIRBU, Lilian; TIGINYANU, Ion; JOHNSTON, Michael. Terahertz photoconductivity of mobile electrons in nanoporous InP honeycombs. In: Physical Review B - Condensed Matter and Materials Physics. 2008, nr. 8(78), p. 0. ISSN 1098-0121.
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Physical Review B - Condensed Matter and Materials Physics
Numărul 8(78) / 2008 / ISSN 1098-0121

Terahertz photoconductivity of mobile electrons in nanoporous InP honeycombs


DOI: 10.1103/PhysRevB.78.085320
Pag. 0-0

Lloyd-Hughes James12, Merchant S. K.E.1, Sirbu Lilian34, Tiginyanu Ion34, Johnston Michael1
 
1 University of Oxford,
2 Institut für Quantenelektronik ETH Zürich,
3 Technical University of Moldova,
4 Academy of Sciences of Moldova
 
Disponibil în IBN: 10 aprilie 2018


Rezumat

Nanostructured semiconductors with favorable optoelectronic properties can be created by electrochemical etching, a fabrication process that is scalable for mass market applications. Using terahertz photoconductivity measurements, we demonstrate that nanoporous InP has an unusually long carrier recombination lifetime that exceeds 100 ns at low temperatures and low carrier density, and an electron mobility half that of bulk InP. Modeling confirms that these observations result from band bending with holes confined to the surface and electrons away from the pores.