Enhanced radiation hardness of ZnO nanorods versus bulk layers
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BURLACU, Alexandru, URSAKI, Veacheslav, LINCOT, Daniel, SKURATOV, Vladimir, PAUPORTE, Thierry, RUSU, Emil, TIGINYANU, Ion. Enhanced radiation hardness of ZnO nanorods versus bulk layers. In: Physica Status Solidi - Rapid Research Letters, 2008, vol. 2, pp. 68-70. ISSN 1862-6254. DOI: https://doi.org/10.1002/pssr.200701318
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Physica Status Solidi - Rapid Research Letters
Volumul 2 / 2008 / ISSN 1862-6254

Enhanced radiation hardness of ZnO nanorods versus bulk layers

DOI: https://doi.org/10.1002/pssr.200701318

Pag. 68-70

Burlacu Alexandru12, Ursaki Veacheslav12, Lincot Daniel3, Skuratov Vladimir4, Pauporte Thierry3, Rusu Emil12, Tiginyanu Ion12
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 Technical University of Moldova,
3 Laboratoire d'Electrochimie et de Chimie Analytique, UMR 7575, ENSCP-CNRS,
4 Joint Institute of Nuclear Research
 
Disponibil în IBN: 6 aprilie 2018


Rezumat

It is shown that ZnO nanorods grown by MOCVD exhibit enhanced radiation hardness against high energy heavy ion irradiation as compared to bulk layers. The decrease of the luminescence intensity induced by 130 MeV Xe+23 irradiation at a dose of 1.5 × 1014 cm 2 in ZnO nanorods is nearly identical to that induced by a dose of 6 × 10 12 cm2 in bulk layers. The change in the nature of electronic transitions responsible for luminescence occurs at an irradiation dose around 1 × 1014 cm2 and 5 × 10 12 cm2 in nanorods and bulk layers, respectively. High energy heavy ion irradiation followed by thermal annealing is also effective on the quality of ZnO nanorods grown by electrodeposition.

Cuvinte-cheie
Electronic transition, Heavy ion irradiation, High energy, Irradiation doseLuminescence intensity, Thermal-annealing, MOCVD, Radiation hardness, ZnO nanorod