Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
618 0 |
SM ISO690:2012 TIGINYANU, Ion, POPA, Veaceslav, STEVENS-KALCEFF, Marion A.. Membrane-assisted revelation of the spatial nanoarchitecture of dislocation networks. In: Materials Letters, 2011, vol. 65, pp. 360-362. ISSN 0167-577X. DOI: https://doi.org/10.1016/j.matlet.2010.10.033 |
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Materials Letters | |
Volumul 65 / 2011 / ISSN 0167-577X | |
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DOI: https://doi.org/10.1016/j.matlet.2010.10.033 | |
Pag. 360-362 | |
Rezumat | |
We propose a method of direct visualization of the spatial nanoarchitecture of dislocation networks which is based on etching away the regions with low density of structural defects from the bulk of GaN epilayers, keeping intact only the threading dislocations and a thin surface filmpre-treated with low-energy Ar+ions. The formation of nanometer-thick suspended membranetowhich the dislocations are genetically attached provides conditions for the revelation of the spatial nanoarchitecture of dislocation networks using conventional scanning electron microscopy. Complementary monochromatic and panchromatic micro-cathodoluminescence images are presented. |
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Cuvinte-cheie Dislocation network, Suspended membrane, Electron microscopy, Luminescence, Semiconductors |
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