| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 787 0 |
 SM ISO690:2012LUPAN, Oleg, PAUPORTE, Thierry, TIGINYANU, Ion, URSACHI, Veaceslav, HEINRICH, Helge H., CHOW, Lee. Optical properties of ZnO nanowire arrays electrodeposited on n- and p-type Si(1 1 1): Effects of thermal annealing. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2011, vol. 176, pp. 1277-1284. ISSN 0921-5107. DOI: https://doi.org/10.1016/j.mseb.2011.07.017 |
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  Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
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| Volumul 176 / 2011 / ISSN 0921-5107 | |
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| DOI:https://doi.org/10.1016/j.mseb.2011.07.017 | |
| Pag. 1277-1284 | |
| Rezumat | |
Electrodeposition is a low temperature and low cost growth method of high quality nanostructured active materials for optoelectronic devices. We report the electrochemical preparation of ZnO nanorod/nanowire arrays on n-Si(1 1 1) and p-Si(1 1 1). The effects of thermal annealing and type of substrates on the optical properties of ZnO nanowires electroplated on silicon (1 1 1) substrate are reported. We fabricated ZnO nanowires/p-Si structure that exhibits a strong UV photoluminescence emission and a negligible visible emission. This UV photoluminescence emission proves to be strongly influenced by the thermal annealing at 150-800 °C. Photo-detectors have been fabricated based on the ZnO nanowires/p-Si heterojunction. |
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| Cuvinte-cheie Annealing, Electrodeposition, Electrolyte-Si junction, photoluminescence, ZnO nanowires, ZnO/Si heterojunction |
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