Photoluminescence and raman study of well-aligned ZnO nanorods on p-si substrate

Ursachi Veaceslav; Lupan Oleg; Tiginyanu Ion; Chai Guangyu; Chow Lee

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603

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similare conform CZU

538.858 (1)

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SM ISO690:2012

URSACHI, Veaceslav, LUPAN, Oleg, TIGINYANU, Ion, CHAI, Guangyu, CHOW, Lee. Photoluminescence and raman study of well-aligned ZnO nanorods on p-si substrate. In: Journal of Nanoelectronics and Optoelectronics, 2011, vol. 6, pp. 473-477. ISSN 1555-130X. DOI: https://doi.org/10.1166/jno.2011.1198

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Journal of Nanoelectronics and Optoelectronics

Volumul 6 / 2011 / ISSN 1555-130X

Photoluminescence and raman study of well-aligned ZnO nanorods on p-si substrate

DOI:https://doi.org/10.1166/jno.2011.1198

CZU: 538.858

Pag. 473-477

Ursachi Veaceslav¹, Lupan Oleg²³, Tiginyanu Ion⁴, Chai Guangyu³, Chow Lee³

¹ Institute of Applied Physics, Academy of Sciences of Moldova,
² Technical University of Moldova,
³ University of Central Florida,
⁴ Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova

Disponibil în IBN: 27 martie 2018

Rezumat

We report on optical properties of ZnO nanorods grown on p-type Si substrates by an electric-field assisted assembly technique in aqueous solutions applied at relative low temperature (96 °C). The results of micro-Raman study are indicative of high crystalline quality of the produced nanorods. The analysis of the photoluminescence properties of the material demonstrates the possibility to control the free carrier concentration by post-growth thermal treatment leading to the formation of compensating centers, while the crystalline quality of the material is not affected.

Cuvinte-cheie
Photoluminescence Properties, Self-Assembly