Yellow luminescence and optical quenching of photoconductivity in ultrathin suspended GaN membranes produced by surface charge lithography

Braniste Tudor; Gerthsen Dagmar; Brenner Patrice; Tiginyanu Ion

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2018-07-26 15:52

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538.9 (350)

Fizica materiei condensate. Fizica solidului (349)

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, , BRANISTE, Tudor, , , GERTHSEN, Dagmar, BRENNER, Patrice, , , , , TIGINYANU, Ion. Yellow luminescence and optical quenching of photoconductivity in ultrathin suspended GaN membranes produced by surface charge lithography. In: Journal of Nanoelectronics and Optoelectronics, 2012, vol. 7, pp. 730-734. ISSN 1555-130X. DOI: https://doi.org/10.1166/jno.2012.1415

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Journal of Nanoelectronics and Optoelectronics

Volumul 7 / 2012 / ISSN 1555-130X

Yellow luminescence and optical quenching of photoconductivity in ultrathin suspended GaN membranes produced by surface charge lithography

DOI:https://doi.org/10.1166/jno.2012.1415

CZU: 538.9

Pag. 730-734

¹, Braniste Tudor¹, ², Gerthsen Dagmar³, Brenner Patrice³, ¹, ⁴, Tiginyanu Ion⁵

¹ Technical University of Moldova,
² University of New South Wales,
³ University of Karlsruhe,
⁴ Institute of Applied Physics, Academy of Sciences of Moldova,
⁵ Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova

Disponibil în IBN: 23 martie 2018

Rezumat

Spatial and spectral distribution of cathodoluminescence as well as photoelectrical properties under excitation with two beams of monochromatic radiation of various wavelengths are investigated in ultrathin suspended GaN membranes produced by surface charge lithography as compared to bulk GaN layers. GaN membranes are designed by focused ion beam treatment of GaN epilayer surfaces with subsequent photoelectrochemical etching. The analysis of the spatial and spectral distribution of microcathodoluminescence demonstrates that the membranes exhibit mainly yellow luminescence (YL). In investigating photoelectrical properties, the first beam of radiation induces photoconductivity, while the second beam is used for the investigation of optical quenching (OQ) effects. It was found that the second beam of radiation produces OQ of photoconductivity, but not quenching of the persistent photoconductivity (PPC), in bulk layers. In contrast to this, OQ of both photoconductivity and PPC occurs in ultrathin GaN membranes. We suggest that the enhancement of YL and the OQ of PPC in ultrathin membranes involved are related to each other, and both phenomena can be attributed to the same point defects which are most likely gallium vacancies.

Cuvinte-cheie
cathodoluminescence, Optical quenching, Persistent Photoconductivity, Surface charge lithography

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<dc:creator></dc:creator>
<dc:creator>Branişte, F.V.</dc:creator>
<dc:creator>Branişte, F.V.</dc:creator>
<dc:creator>Gerthsen, D.</dc:creator>
<dc:creator>Brenner, P.</dc:creator>
<dc:creator>Brenner, P.</dc:creator>
<dc:creator>Brenner, P.</dc:creator>
<dc:creator>Тигиняну, ..</dc:creator>
<dc:date>2012-12-01</dc:date>
<dc:description xml:lang='en'><p>Spatial and spectral distribution of cathodoluminescence as well as photoelectrical properties under excitation with two beams of monochromatic radiation of various wavelengths are investigated in ultrathin suspended GaN membranes produced by surface charge lithography as compared to bulk GaN layers. GaN membranes are designed by focused ion beam treatment of GaN epilayer surfaces with subsequent photoelectrochemical etching. The analysis of the spatial and spectral distribution of microcathodoluminescence demonstrates that the membranes exhibit mainly yellow luminescence (YL). In investigating photoelectrical properties, the first beam of radiation induces photoconductivity, while the second beam is used for the investigation of optical quenching (OQ) effects. It was found that the second beam of radiation produces OQ of photoconductivity, but not quenching of the persistent photoconductivity (PPC), in bulk layers. In contrast to this, OQ of both photoconductivity and PPC occurs in ultrathin GaN membranes. We suggest that the enhancement of YL and the OQ of PPC in ultrathin membranes involved are related to each other, and both phenomena can be attributed to the same point defects which are most likely gallium vacancies.</p></dc:description>
<dc:identifier>10.1166/jno.2012.1415</dc:identifier>
<dc:source>Journal of Nanoelectronics and Optoelectronics  () 730-734</dc:source>
<dc:subject>cathodoluminescence</dc:subject>
<dc:subject>Optical quenching</dc:subject>
<dc:subject>Persistent Photoconductivity</dc:subject>
<dc:subject>Surface charge lithography</dc:subject>
<dc:title>Yellow luminescence and optical quenching of photoconductivity in ultrathin suspended GaN membranes produced by surface charge lithography</dc:title>
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