Yellow luminescence and optical quenching of photoconductivity in ultrathin suspended GaN membranes produced by surface charge lithography
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2018-07-26 15:52
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POPA, Veaceslav; BRANIŞTE, Tudor; STEVENS-KALCEFF, MarionA.; GERTHSEN, Dagmar; BRENNER, Patrice; POSTOLACHE, Vitalie; URSAKI, Veacheslav; TIGINYANU, Ion. Yellow luminescence and optical quenching of photoconductivity in ultrathin suspended GaN membranes produced by surface charge lithography. In: Journal of Nanoelectronics and Optoelectronics. 2012, nr. 7(7), pp. 730-734. ISSN 1555-130X.
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Journal of Nanoelectronics and Optoelectronics
Numărul 7(7) / 2012 / ISSN 1555-130X

Yellow luminescence and optical quenching of photoconductivity in ultrathin suspended GaN membranes produced by surface charge lithography


DOI: 10.1166/jno.2012.1415
Pag. 730-734

Popa Veaceslav1, Branişte Tudor1, Stevens-Kalceff MarionA.2, Gerthsen Dagmar3, Brenner Patrice3, Postolache Vitalie1, Ursaki Veacheslav4, Tiginyanu Ion5
 
1 Technical University of Moldova,
2 University of New South Wales,
3 Universitatea Karlsruhe,
4 Institute of Applied Physics, Academy of Sciences of Moldova,
5 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova
 
Disponibil în IBN: 23 martie 2018


Rezumat

Spatial and spectral distribution of cathodoluminescence as well as photoelectrical properties under excitation with two beams of monochromatic radiation of various wavelengths are investigated in ultrathin suspended GaN membranes produced by surface charge lithography as compared to bulk GaN layers. GaN membranes are designed by focused ion beam treatment of GaN epilayer surfaces with subsequent photoelectrochemical etching. The analysis of the spatial and spectral distribution of microcathodoluminescence demonstrates that the membranes exhibit mainly yellow luminescence (YL). In investigating photoelectrical properties, the first beam of radiation induces photoconductivity, while the second beam is used for the investigation of optical quenching (OQ) effects. It was found that the second beam of radiation produces OQ of photoconductivity, but not quenching of the persistent photoconductivity (PPC), in bulk layers. In contrast to this, OQ of both photoconductivity and PPC occurs in ultrathin GaN membranes. We suggest that the enhancement of YL and the OQ of PPC in ultrathin membranes involved are related to each other, and both phenomena can be attributed to the same point defects which are most likely gallium vacancies.

Cuvinte-cheie
cathodoluminescence, Focused-ion beam treatment, Utrathin membranes,

Optical quenching, Persistent Photoconductivity, Surface charge lithography