|Conţinutul numărului revistei|
|Ultima descărcare din IBN:|
| SM ISO690:2012|
VILAPLANA, Rosario Isabel; ROBLEDILLO, M.; GOMIS, Oscar; SANS, J.; MANJON, Francisco Javier; PEREZ-GONZALEZ, Eduardo; RODRIGUEZ-HERNANDEZ, Placida Rogelio; MUNOZ, Alfonso Gonzalez; TIGINYANU, Ion; URSAKI, Veacheslav. Vibrational study of HgGa2S4 under high pressure. In: Journal of Applied Physics. 2013, nr. 9(113), p. 0. ISSN 0021-8979.
|Journal of Applied Physics|
|Numărul 9(113) / 2013 / ISSN 0021-8979|
In this work, we report on high-pressure Raman scattering measurements in mercury digallium sulfide (HgGa2S4) with defect chalcopyrite structure that have been complemented with lattice dynamics ab initio calculations. Our measurements evidence that this semiconductor exhibits a pressure-induced phase transition from the completely ordered defect chalcopyrite structure to a partially disordered defect stannite structure above 18 GPa which is prior to the transition to the completely disordered rocksalt phase above 23 GPa. Furthermore, a completely disordered zincblende phase is observed below 5 GPa after decreasing pressure from 25 GPa. The disordered zincblende phase undergoes a reversible pressure-induced phase transition to the disordered rocksalt phase above 18 GPa. The sequence of phase transitions here reported for HgGa2S4 evidence the existence of an intermediate phase with partial cation-vacancy disorder between the ordered defect chalcopyrite and the disordered rocksalt phases and the irreversibility of the pressure-induced order-disorder processes occurring in ordered-vacancy compounds. The pressure dependence of the Raman modes of all phases, except the Raman-inactive disordered rocksalt phase, have been measured and discussed.
ab initio calculations,
Defect chalcopyrite structure, Defect chalcopyrites, High pressureIntermediate phase, Pressure dependence, Pressure-induced phase transition, Raman modes, Raman Scattering measurements, Rock salt, Rock-salt phase, Vibrational study, Zinc-blende