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SM ISO690:2012 VILAPLANA, Rosario Isabel, GOMIS, Oscar, MANJON, Francisco Javier, ORTIZ, Henry M, PEREZ-GONZALEZ, Eduardo, LOPEZ-SOLANO, Javier, RODRIGUEZ-HERNANDEZ, Placida Rogelio, MUNOZ, Alfonso Gonzalez, ERRANDONEA, Daniel J.H., URSACHI, Veaceslav, TIGINYANU, Ion. Lattice dynamics study of HgGa2Se4 at high pressures. In: Journal of Physical Chemistry C, 2013, vol. 117, pp. 15773-15781. ISSN 1932-7447. DOI: https://doi.org/10.1021/jp402493r |
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Journal of Physical Chemistry C | |
Volumul 117 / 2013 / ISSN 1932-7447 /ISSNe 1932-7455 | |
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DOI:https://doi.org/10.1021/jp402493r | |
Pag. 15773-15781 | |
Vezi articolul | |
Rezumat | |
We report on Raman scattering measurements in mercury digallium selenide (HgGa2Se4) up to 25 GPa. We also performed, for the low-pressure defect-chalcopyrite structure, lattice-dynamics ab initio calculations at high pressures which agree with experiments. Measurements evidence that the semiconductor HgGa2Se4 exhibits a pressure-induced phase transition above 19 GPa to a previously undetected structure. This transition is followed by a transformation to a Raman-inactive phase above 23.4 GPa. On downstroke from 25 GPa until 2.5 GPa, a broad Raman spectrum was observed, which has been attributed to a fourth phase, and whose pressure dependence was followed during a second upstroke. Candidate structures for the three phases detected under compression are proposed. Finally, we also report and discuss the decomposition of the sample by laser heating at pressures close to 19 GPa. As possible products of decomposition, we have identified at least the formation of trigonal selenium nanoclusters and cinnabar-type HgSe. |
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Cuvinte-cheie Engineering controlled terms Flight dynamics, Raman scattering, Solids Engineering uncontrolled terms Ab initio calculations, Downstrokes, High pressure, Pressure dependence, Pressure-induced phase transition, Raman Scattering measurements, Selenides, Three phasis Engineering main heading Crystal lattices |
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