The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes
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VOLCIUC, Olesea, BRANISTE, Tudor, TIGINYANU, Ion, STEVENS-KALCEFF, Marion A., EBELING, Jakob, ASCHENBRENNER, Timo, HOMMEL, Detlef, URSAKI, Veacheslav, GUTOWSKI, Jurgen. The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes. In: Applied Physics Letters, 2013, vol. 103, p. 0. ISSN 0003-6951. DOI: https://doi.org/10.1063/1.4847735
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Applied Physics Letters
Volumul 103 / 2013 / ISSN 0003-6951

The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes

DOI: https://doi.org/10.1063/1.4847735

Pag. 0-0

Volciuc Olesea12, Braniste Tudor2, Tiginyanu Ion23, Stevens-Kalceff Marion A.4, Ebeling Jakob1, Aschenbrenner Timo1, Hommel Detlef1, Ursaki Veacheslav5, Gutowski Jurgen1
 
1 University of Bremen,
2 Technical University of Moldova,
3 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
4 University of New South Wales,
5 Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 22 martie 2018


Rezumat

We report on fabrication of suspended ∼15 nm thick GaN membranes nanoperforated in an ordered fashion using direct writing of negative charges by focused ion beam and subsequent photoelectrochemical etching of GaN epilayers. Both continuous and nanoperforated membranes exhibit persistent photoconductivity (PPC), which can be optically quenched under excitation by 546 nm radiation. Optical quenching of PPC occurs also under relatively intense intrinsic excitation of nanoperforated membranes by 355 nm radiation at T < 100 K. The proposed explanation is based on strong surface localization of charge carriers in nanoperforated membranes and UV-induced reactions occurring at surface states under intense intrinsic excitation.

Cuvinte-cheie
Direct writing, Nanomembranes, Nanoperforation, Negative charge, Photo-electrochemical etching, Surface localization, Optical quenching, Persistent Photoconductivity

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<dc:creator>Volciuc, O.</dc:creator>
<dc:creator>Branişte, F.V.</dc:creator>
<dc:creator>Tighineanu, I.M.</dc:creator>
<dc:creator>Stevens-Kalceff, M.</dc:creator>
<dc:creator>Ebeling, J.</dc:creator>
<dc:creator>Aschenbrenner, T.</dc:creator>
<dc:creator>Hommel, D.</dc:creator>
<dc:creator>Ursachi, V.V.</dc:creator>
<dc:creator>Gutowski, J.</dc:creator>
<dc:date>2013-12-09</dc:date>
<dc:description xml:lang='en'><p>We report on fabrication of suspended &sim;15 nm thick GaN membranes nanoperforated in an ordered fashion using direct writing of negative charges by focused ion beam and subsequent photoelectrochemical etching of GaN epilayers. Both continuous and nanoperforated membranes exhibit persistent photoconductivity (PPC), which can be optically quenched under excitation by 546 nm radiation. Optical quenching of PPC occurs also under relatively intense intrinsic excitation of nanoperforated membranes by 355 nm radiation at T &lt; 100 K. The proposed explanation is based on strong surface localization of charge carriers in nanoperforated membranes and UV-induced reactions occurring at surface states under intense intrinsic excitation.</p></dc:description>
<dc:identifier>10.1063/1.4847735</dc:identifier>
<dc:source>Applied Physics Letters  () 0-0</dc:source>
<dc:subject>Direct writing</dc:subject>
<dc:subject>Nanomembranes</dc:subject>
<dc:subject>Nanoperforation</dc:subject>
<dc:subject>Negative charge</dc:subject>
<dc:subject>Photo-electrochemical etching</dc:subject>
<dc:subject>Surface localization</dc:subject>
<dc:subject>Optical quenching</dc:subject>
<dc:subject>Persistent Photoconductivity</dc:subject>
<dc:title>The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes</dc:title>
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