Quantum Oscillations in Bi-Sb Topological Insulator Microwires
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2018-10-10 16:53
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KONOPKO, Leonid, NIKOLAEVA, Albina, HUBER, Tito, ROGACKI, Krzysztof. Quantum Oscillations in Bi-Sb Topological Insulator Microwires. In: Multidisciplinarity in Modern Science for the Benefit of Society, 21-22 septembrie 2017, Chișinău. Chișinău, Republica Moldova: Inst. de Fizică Aplicată, 2017, p. 55. ISBN 978-9975-9787-1-2.
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Multidisciplinarity in Modern Science for the Benefit of Society 2017
Masa rotundă "Multidisciplinarity in Modern Science for the Benefit of Society"
Chișinău, Moldova, 21-22 septembrie 2017

Quantum Oscillations in Bi-Sb Topological Insulator Microwires


Pag. 55-55

Konopko Leonid1, Nikolaeva Albina1, Huber Tito2, Rogacki Krzysztof3
 
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
2 Howard University,
3 Institute of Low Temperatures and Structural Research, PAS
 
Disponibil în IBN: 17 martie 2018



Teza

Here we study Topological Insulator Bi1-xSbx nanowires with x = 0.17, that in the bulk, are semiconductors with an L-point gap of 21 meV. Individual Bi0.83Sb0.17 nanowires were fabricated using the Ulitovsky technique [1]. Nanowire samples with diameters ranging from 75 nm to 1.1 μm were prepared. The nanowires are single crystals with (1011) orientation along the wire axis. With the Ulitovsky technique owing to the high frequency stirring and high speed crystallization (> 103 K/s) involved it is possible to obtain homogeneous monocrystalline Bi0.83Sb0.17 nanowires. We investigate the magnetoresistance (MR) of Bi0.83Sb0.17 nanowires at various magnetic field orientations. Shubnikov-de Haas (SdH) oscillations are observed in Bi0.83Sb0.17 nanowires with diameter d = 200 nm at T = 1.5 K and 3 K, demonstrating the existence of high mobility (μS = 26700 - 47000 cm2V-1s-1) two-dimensional (2D) carriers in the surface areas of the nanowires, which are nearly perpendicular to the C3 axis. In thin Bi0.83Sb0.17 nanowires (d <= 100 nm) at low temperatures (1.5 K <= T < 5 K), we discovered the Aharonov–Bohm (AB) oscillations of longitudinal MR with two periods - one flux quantum, Ф 0 and half of flux quantum, Ф0/2, (ΔB1 =Ф0/S, ΔB2 =Ф0/2S, where S is the cross-sectional area of the nanowire). The periods ΔB depend on the inclination angle α of the magnetic field direction according to the law ΔB=ΔBparallel/cos α. This law is preserved up to angles of about 60 degrees. The nonmonotonic changes of magnetoresistance, which are equidistant in a direct magnetic field, were observed in transverse magnetic fields under conditions where the magnetic flux through the cylinder Ф = 0. Possible reasons for this behavior by analogy with thin bismuth nanowires are discussed.