Arsenic selenide glasses are well known as high photosensitive materials with a wide range of application in optoelectronics and information storage systems. Besides that it was found that the impurities influence the electrical and photoelectrical characteristics of the amorphous material, due to the changes in the density of localized states. Some experimental results on stationary photoconductivity of amorphous (As4S3Se3)1-xSnx thin films were presented in [1]. In the present paper the experimental results on steady-state photoconductivity of amorphous (As4S3Se3)1-xSnx thin films are discussed. The spectral dependence of the photocurrent for all Al-(As4S3Se3)1-xSnx-Al thin film structures depend on the polarity of the applied voltage on the illuminated electrode and has the similar shape. Using the obtained spectra of the photocurrent and the Moss rule were estimated the band gap values Eg ph, according which the band gap corresponds to the value of the wavelength (λ0) g 0 E ph =1.24 λ₀ at which the photocurrent fall down to a half value of it maximum, as is shown in Fig.1. Fig.2 represents the results of deconvoluted photocurrent spectrum using Gaussian function for Al-(As4S3Se3)0.90Sn0.10-Al thin films structure. The peak centered at hγ =2.27 eV correspond to band-to-band photo-excitation of non-equilibrium carriers. The peaks situated around hγ=2.07 eV and hγ=1.85 eV can be attributed to some groups of localized levels induced by Sn impurities in the host chalcogenide glass. The dependence of the steady-state photocurrent on the light intensity for all investigated amorphous thin films is non-linear, and is described by the expression Iph ~ F^α, were α takes the values 0.5<0<1.0 (Fig.3). The experimental results on relaxation of photoconductivity are explained in framework of multiple trapping model [2], according to which the non-equilibrium carriers are multiple captured in the deep traps, exponentially or quasi-continuously distributed in energy in the mobility band gap in amorphous semiconductors.