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SM ISO690:2012 DRAGOMAN, Mircea L., TIGINYANU, Ion, DINESCU, Adrian, CIOBANU, Vladimir, RUSU, Emil, DRAGOMAN, Daniela, BATIRI, Mihail. A SnS2-based photomemristor driven by sun. In: Journal of Applied Physics, 2018, vol. 123, p. 0. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.5001275 |
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Journal of Applied Physics | |
Volumul 123 / 2018 / ISSN 0021-8979 /ISSNe 1089-7550 | |
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DOI: https://doi.org/10.1063/1.5001275 | |
Pag. 0-0 | |
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Rezumat | |
We demonstrate experimentally that a sample of a SnS2 layered semiconductor compound with the area of 1 cm2 and the thickness of 100 μm, contacted laterally by silver electrodes with the area of 1 mm2, acts naturally as a memristor device when illuminated by a sun simulator. Although the conductance of the device changes with the number of pulses or voltages sweeps, the current-voltage dependence is almost linear, showing only a very narrow but clearly pinched hysteresis, which is the main imprint of a memristor. This SnS2-based solid-state miniaturized photomemristor could be used for the implementation of all-optical neuromorphic circuits based on artificial neurons and synapses, oriented to learning algorithms of living organisms. |
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Cuvinte-cheie biology, Memristors, Tin compounds |
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<?xml version='1.0' encoding='utf-8'?> <oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'> <dc:creator>Dragoman, M.</dc:creator> <dc:creator>Tighineanu, I.M.</dc:creator> <dc:creator>Dinescu, A.</dc:creator> <dc:creator>Ciobanu, V.N.</dc:creator> <dc:creator>Rusu, E.V.</dc:creator> <dc:creator>Dragoman, D.</dc:creator> <dc:creator>Batiri, M.</dc:creator> <dc:date>2018-01-14</dc:date> <dc:description xml:lang='en'><p>We demonstrate experimentally that a sample of a SnS<sub>2</sub> layered semiconductor compound with the area of 1 cm<sup>2</sup> and the thickness of 100 μm, contacted laterally by silver electrodes with the area of 1 mm<sup>2</sup>, acts naturally as a memristor device when illuminated by a sun simulator. Although the conductance of the device changes with the number of pulses or voltages sweeps, the current-voltage dependence is almost linear, showing only a very narrow but clearly pinched hysteresis, which is the main imprint of a memristor. This SnS<sub>2</sub>-based solid-state miniaturized photomemristor could be used for the implementation of all-optical neuromorphic circuits based on artificial neurons and synapses, oriented to learning algorithms of living organisms.</p></dc:description> <dc:identifier>10.1063/1.5001275</dc:identifier> <dc:source>Journal of Applied Physics () 0-0</dc:source> <dc:subject>biology</dc:subject> <dc:subject>Memristors</dc:subject> <dc:subject>Tin compounds</dc:subject> <dc:title>A SnS2-based photomemristor driven by sun</dc:title> <dc:type>info:eu-repo/semantics/article</dc:type> </oai_dc:dc>