A SnS2-based photomemristor driven by sun
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DRAGOMAN, Mircea L., TIGINYANU, Ion, DINESCU, Adrian, CIOBANU, Vladimir, RUSU, Emil, DRAGOMAN, Daniela, BATIRI, Mihail. A SnS2-based photomemristor driven by sun. In: Journal of Applied Physics, 2018, vol. 123, p. 0. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.5001275
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Journal of Applied Physics
Volumul 123 / 2018 / ISSN 0021-8979 /ISSNe 1089-7550

A SnS2-based photomemristor driven by sun

DOI: https://doi.org/10.1063/1.5001275

Pag. 0-0

Dragoman Mircea L.1, Tiginyanu Ion2, Dinescu Adrian1, Ciobanu Vladimir3, Rusu Emil2, Dragoman Daniela45, Batiri Mihail3
 
1 National Institute for Research and Development in Microtechnologies ,
2 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
3 Technical University of Moldova,
4 University of Bucharest,
5 Romanian Academy of Science
 
Disponibil în IBN: 23 februarie 2018


Rezumat

We demonstrate experimentally that a sample of a SnS2 layered semiconductor compound with the area of 1 cm2 and the thickness of 100 μm, contacted laterally by silver electrodes with the area of 1 mm2, acts naturally as a memristor device when illuminated by a sun simulator. Although the conductance of the device changes with the number of pulses or voltages sweeps, the current-voltage dependence is almost linear, showing only a very narrow but clearly pinched hysteresis, which is the main imprint of a memristor. This SnS2-based solid-state miniaturized photomemristor could be used for the implementation of all-optical neuromorphic circuits based on artificial neurons and synapses, oriented to learning algorithms of living organisms.

Cuvinte-cheie
biology, Memristors, Tin compounds

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<dc:creator>Dragoman, M.</dc:creator>
<dc:creator>Tighineanu, I.M.</dc:creator>
<dc:creator>Dinescu, A.</dc:creator>
<dc:creator>Ciobanu, V.N.</dc:creator>
<dc:creator>Rusu, E.V.</dc:creator>
<dc:creator>Dragoman, D.</dc:creator>
<dc:creator>Batiri, M.</dc:creator>
<dc:date>2018-01-14</dc:date>
<dc:description xml:lang='en'><p>We demonstrate experimentally that a sample of a SnS<sub>2</sub> layered semiconductor compound with the area of 1 cm<sup>2</sup> and the thickness of 100 &mu;m, contacted laterally by silver electrodes with the area of 1 mm<sup>2</sup>, acts naturally as a memristor device when illuminated by a sun simulator. Although the conductance of the device changes with the number of pulses or voltages sweeps, the current-voltage dependence is almost linear, showing only a very narrow but clearly pinched hysteresis, which is the main imprint of a memristor. This SnS<sub>2</sub>-based solid-state miniaturized photomemristor could be used for the implementation of all-optical neuromorphic circuits based on artificial neurons and synapses, oriented to learning algorithms of living organisms.</p></dc:description>
<dc:identifier>10.1063/1.5001275</dc:identifier>
<dc:source>Journal of Applied Physics  () 0-0</dc:source>
<dc:subject>biology</dc:subject>
<dc:subject>Memristors</dc:subject>
<dc:subject>Tin compounds</dc:subject>
<dc:title>A SnS2-based photomemristor driven by sun</dc:title>
<dc:type>info:eu-repo/semantics/article</dc:type>
</oai_dc:dc>