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SM ISO690:2012 DRAGOMAN, Mircea L., TIGINYANU, Ion, DINESCU, Adrian, CIOBANU, Vladimir, RUSU, Emil, DRAGOMAN, Daniela, BATIRI, Mihail. A SnS2-based photomemristor driven by sun. In: Journal of Applied Physics, 2018, vol. 123, p. 0. ISSN 0021-8979. DOI: https://doi.org/10.1063/1.5001275 |
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Journal of Applied Physics | |
Volumul 123 / 2018 / ISSN 0021-8979 /ISSNe 1089-7550 | |
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DOI:https://doi.org/10.1063/1.5001275 | |
Pag. 0-0 | |
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We demonstrate experimentally that a sample of a SnS2 layered semiconductor compound with the area of 1 cm2 and the thickness of 100 μm, contacted laterally by silver electrodes with the area of 1 mm2, acts naturally as a memristor device when illuminated by a sun simulator. Although the conductance of the device changes with the number of pulses or voltages sweeps, the current-voltage dependence is almost linear, showing only a very narrow but clearly pinched hysteresis, which is the main imprint of a memristor. This SnS2-based solid-state miniaturized photomemristor could be used for the implementation of all-optical neuromorphic circuits based on artificial neurons and synapses, oriented to learning algorithms of living organisms. |
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Cuvinte-cheie biology, Memristors, Tin compounds |
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<?xml version='1.0' encoding='utf-8'?> <resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'> <identifier identifierType='DOI'>10.1063/1.5001275</identifier> <creators> <creator> <creatorName>Dragoman, M.</creatorName> <affiliation>Institutul National de Cercetare si Dezvoltare pentru Microtehnologii IMT-Bucuresti, România</affiliation> </creator> <creator> <creatorName>Tighineanu, I.M.</creatorName> <affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Dinescu, A.</creatorName> <affiliation>Institutul National de Cercetare si Dezvoltare pentru Microtehnologii IMT-Bucuresti, România</affiliation> </creator> <creator> <creatorName>Ciobanu, V.N.</creatorName> <affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Rusu, E.V.</creatorName> <affiliation>Institutul de Inginerie Electronică şi Nanotehnologii "D. Ghiţu" al AŞM, Moldova, Republica</affiliation> </creator> <creator> <creatorName>Dragoman, D.</creatorName> <affiliation>Universitatea din Bucureşti, România</affiliation> </creator> <creator> <creatorName>Batiri, M.</creatorName> <affiliation>Universitatea Tehnică a Moldovei, Moldova, Republica</affiliation> </creator> </creators> <titles> <title xml:lang='en'>A SnS2-based photomemristor driven by sun</title> </titles> <publisher>Instrumentul Bibliometric National</publisher> <publicationYear>2018</publicationYear> <relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>0021-8979</relatedIdentifier> <subjects> <subject>biology</subject> <subject>Memristors</subject> <subject>Tin compounds</subject> </subjects> <dates> <date dateType='Issued'>2018-01-14</date> </dates> <resourceType resourceTypeGeneral='Text'>Journal article</resourceType> <descriptions> <description xml:lang='en' descriptionType='Abstract'><p>We demonstrate experimentally that a sample of a SnS<sub>2</sub> layered semiconductor compound with the area of 1 cm<sup>2</sup> and the thickness of 100 μm, contacted laterally by silver electrodes with the area of 1 mm<sup>2</sup>, acts naturally as a memristor device when illuminated by a sun simulator. Although the conductance of the device changes with the number of pulses or voltages sweeps, the current-voltage dependence is almost linear, showing only a very narrow but clearly pinched hysteresis, which is the main imprint of a memristor. This SnS<sub>2</sub>-based solid-state miniaturized photomemristor could be used for the implementation of all-optical neuromorphic circuits based on artificial neurons and synapses, oriented to learning algorithms of living organisms.</p></description> </descriptions> <formats> <format>uri</format> </formats> </resource>