Full-switching FSF-type superconducting spin-triplet magnetic random access memory element
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LENK, D.; MORARI, Roman; ZDRAVKOV, Vladimir; ULLRICH, Aladin; KHAYDUKOV, Yu N.; OBERMEIER, Guenter; MULLER, C; SIDORENKO, Anatolie; KRUG VON NIDDA, Hans Albrecht; HÖRN, Siegfried; TAGIROV, Lenar; TIDECKS, Reinhard. Full-switching FSF-type superconducting spin-triplet magnetic random access memory element. In: Physical Review B. 2017, nr. 18(96), p. 0. ISSN -.
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Physical Review B
Numărul 18(96) / 2017 / ISSN - /ISSNe 0163-1829

Full-switching FSF-type superconducting spin-triplet magnetic random access memory element


DOI: 10.1103/PhysRevB.96.184521
Pag. 0-0

Lenk D.1, Morari Roman12, Zdravkov Vladimir12, Ullrich Aladin1, Khaydukov Yu N.3, Obermeier Guenter1, Muller C1, Sidorenko Anatolie2, Krug Von Nidda Hans Albrecht1, Hörn Siegfried1, Tagirov Lenar145, Tidecks Reinhard1
 
1 University of Augsburg,
2 Ghitu Institute of Electronic Engineering and Nanotechnology of the Academy of Sciences of Moldova,
3 Max Planck Institute for Solid State Research,
4 Kazan State University, Kazan,
5 Zavoisky Physical Technical Institute of the Russian Academy of Sciences
 
Disponibil în IBN: 5 februarie 2018


Rezumat

In the present work a superconducting Co/CoOx/Cu41Ni59/Nb/Cu41Ni59 nanoscale thin film heterostructure is investigated, which exhibits a superconducting transition temperature, Tc, depending on the history of magnetic field applied parallel to the film plane. In more detail, around zero applied field, Tc is lower when the field is changed from negative to positive polarity (with respect to the cooling field), compared to the opposite case. We interpret this finding as the result of the generation of the odd-in-frequency triplet component of superconductivity arising at noncollinear orientation of the magnetizations in the Cu41Ni59 layer adjacent to the CoOx layer. This interpretation is supported by superconducting quantum interference device magnetometry, which revealed a correlation between details of the magnetic structure and the observed superconducting spin-valve effects. Readout of information is possible at zero applied field and, thus, no permanent field is required to stabilize both states. Consequently, this system represents a superconducting magnetic random access memory element for superconducting electronics. By applying increased transport currents, the system can be driven to the full switching mode between the completely superconducting and the normal state.