<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xmlns='http://datacite.org/schema/kernel-3' xsi:schemaLocation='http://datacite.org/schema/kernel-3 http://schema.datacite.org/meta/kernel-3/metadata.xsd'>
<identifier identifierType='DOI'>10.1038/s41598-017-10883-0</identifier>
<creators>
<creator>
<creatorName>Guc, M.S.</creatorName>
<affiliation>Lappeenranta University of Technology, Finlanda</affiliation>
</creator>
<creator>
<creatorName>Lahderanta, E.M.</creatorName>
<affiliation>Lappeenranta University of Technology, Finlanda</affiliation>
</creator>
<creator>
<creatorName>Hajdeu-Chicaros, E.F.</creatorName>
<affiliation>Lappeenranta University of Technology, Finlanda</affiliation>
</creator>
<creator>
<creatorName>Levcenco, S.V.</creatorName>
<affiliation>Helmholtz-Centre Berlin for Materials and Energy, Germania</affiliation>
</creator>
<creator>
<creatorName>Shakhov, M.A.</creatorName>
<affiliation>Lappeenranta University of Technology, Finlanda</affiliation>
</creator>
<creator>
<creatorName>Zakharchuk, I.</creatorName>
<affiliation>Lappeenranta University of Technology, Finlanda</affiliation>
</creator>
<creator>
<creatorName>Aruşanov, E.C.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Lisunov, C.G.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>Mechanisms of charge transfer and electronic properties of Cu2ZnGeS4 from investigations of the high-field magnetotransport</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2017</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>2045-2322</relatedIdentifier>
<dates>
<date dateType='Issued'>2017-12-01</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'><p>Recent development of the thin film solar cells, based on quaternary compounds, has been focused on the Ge contain compounds and their solid solutions. However, for effective utilization of Cu<sub>2</sub>ZnGeS<sub>4</sub>, deeper investigations of its transport properties are required. In the present manuscript, we investigate resistivity, &rho; (T), magnetoresistance and Hall effect in p-type Cu<sub>2</sub>ZnGeS<sub>4</sub> single crystals in pulsed magnetic fields up to 20 T. The dependence of &rho; (T) in zero magnetic field is described by the Mott type of the variable-range hopping (VRH) charge transfer mechanism within a broad temperature interval of ~100-200 K. Magnetoresistance contains the positive and negative components, which are interpreted by the common reasons of doped semiconductors. On the other hand, a joint analysis of the resistivity and magnetoresistance data has yielded series of important electronic parameters and permitted specification of the Cu<sub>2</sub>ZnGeS<sub>4</sub> conductivity mechanisms outside the temperature intervals of the Mott VRH conduction. The Hall coefficient is negative, exhibiting an exponential dependence on temperature, which is quite close to that of &rho;(T). This is typical of the Hall effect in the domain of the VRH charge transfer.</p></description>
</descriptions>
<formats>
<format>uri</format>
</formats>
</resource>