As it is known, the assignment of defects and impurities embedded in the crystalline lattice of Charge Coupled Devices (CCDs), used as particle detectors is achieved starting from the values of some physical parameters, mainly of the a) difference |Et – Ei| between the energies corresponding to the traps and the intrinsic Fermi level, respectively, b) the polarization degree of capture cross- sections of free electrons and holes, respectively, c) the pre-exponential factor Dep of the depletion dark current. In the frame of the classical gradient method, the values of these physical parameters are found by means of the attraction centers (attractors) of the iterative procedure. For this reason, the present work aims to study the main features of the attraction centers (and of some related numerical phenomena) intervening in the evaluation of main physical parameters of (the temperature dependence of the dark current in) CCDs by means of the classical gradient method

Lucrarea de faţă are drept scop studiul principalelor caracteristici ale centrelor de atracţie (şi ale unor fenomene numerice asociate) care intervin în evaluarea principalilor parametri fizici ai (dependenţei de temperatură a curentului întunecat în) CCD (dispozitive cu cuplaj de sarcină) prin metoda clasica a gradientului.