HgGa2Se4 under high pressure: An optical absorption study
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GOMIS, Oscar; VILAPLANA, Rosario Isabel; MANJON, Francisco Javier; RUIZ-FUERTES, Javier; PEREZ-GONZALEZ, Eduardo; LOPEZ-SOLANO, Javier; BANDIELLO, Enrico; ERRANDONEA, Daniel J.H.; SEGURA, Alfredo; RODRIGUEZ-HERNANDEZ, Placida Rogelio; MUNOZ, Alfonso Gonzalez; URSAKI, Veacheslav; TIGINYANU, Ion. HgGa2Se4 under high pressure: An optical absorption study. In: Physica Status Solidi (B) Basic Research. 2015, nr. 9(252), pp. 2043-2051. ISSN 0370-1972.
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Physica Status Solidi (B) Basic Research
Numărul 9(252) / 2015 / ISSN 0370-1972

HgGa2Se4 under high pressure: An optical absorption study

DOI: 10.1002/pssb.201451714
Pag. 2043-2051

Gomis Oscar1, Vilaplana Rosario Isabel1, Manjon Francisco Javier1, Ruiz-Fuertes Javier12, Perez-Gonzalez Eduardo3, Lopez-Solano Javier3, Bandiello Enrico2, Errandonea Daniel J.H.2, Segura Alfredo2, Rodriguez-Hernandez Placida Rogelio3, Munoz Alfonso Gonzalez3, Ursaki Veacheslav4, Tiginyanu Ion4
1 Universitat Politècnica de València,
2 Universitat de València,
3 Universidad de La Laguna, La Laguna,
4 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova
Disponibil în IBN: 19 decembrie 2017


High-pressure optical absorption measurements have been performed in defect chalcopyrite HgGa2Se4 to investigate the influence of pressure on the bandgap energy and its relation with the pressure-induced order-disorder processes that occur in this ordered-vacancy compound. Two different experiments have been carried out in which the sample undergoes either a partial or a total pressure-induced disorder process at 15.4 and 30.8GPa, respectively. It has been found that the direct bandgap energies of the recovered samples at 1GPa were around 0.15 and 0.23eV smaller than that of the original sample, respectively, and that both recovered samples have different pressure coefficients of the direct bandgap than the original sample. A comprehensive explanation for these results on the basis of pressure-induced order-disorder processes is provided.

Bandgap energy, Defect chalcopyrite, Order-disorder transitions,

High pressure, optical properties