Self-organized three-dimensional nanostructured architectures in bulk GaN generated by spatial modulation of doping
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TIGINYANU, Ion; STEVENS-KALCEFF, MarionA.; SARUA, Andrei; BRANIŞTE, Tudor; MONAICO, Eduard; POPA, Veaceslav; ANDRADE, Hugo D; THOMAS, James; RAEVSCHI, Simion; SCHULTE, K.; ADELUNG, Rainer. Self-organized three-dimensional nanostructured architectures in bulk GaN generated by spatial modulation of doping. In: ECS Journal of Solid State Science and Technology. 2016, nr. 5(5), pp. 218-227. ISSN 2162-8769.
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ECS Journal of Solid State Science and Technology
Numărul 5(5) / 2016 / ISSN 2162-8769 /ISSNe 2162-8777

Self-organized three-dimensional nanostructured architectures in bulk GaN generated by spatial modulation of doping


DOI: 10.1149/2.0091605jss
Pag. 218-227

Tiginyanu Ion12, Stevens-Kalceff MarionA.3, Sarua Andrei4, Branişte Tudor2, Monaico Eduard2, Popa Veaceslav2, Andrade Hugo D4, Thomas James4, Raevschi Simion5, Schulte K.6, Adelung Rainer7
 
1 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
2 Technical University of Moldova,
3 University of New South Wales,
4 University of Bristol,
5 State University of Moldova,
6 Technische Universitat Hamburg-Harburg, Institute of Polymers and Composites, Hamburg,
7 Institute for Material Science, Christian-Albrechts- University of Kiel
 
Disponibil în IBN: 18 decembrie 2017


Rezumat

Self-organized 3D nanostructured architectures including quasi-ordered concentric hexagonal structures generated during the growth of single crystalline n-GaN substrates by hydride vapor phase epitaxy (HVPE) are reported. The study of as-grown samples by using Kelvin Probe Force Microscopy shows that the formation of self-organized architectures can be attributed to fine modulation of doping related to the spatial distribution of impurities. The specific features of nanostructured architectures involved have been brought to light by using electrochemical and photoelectrochemical etching techniques which are highly sensitive to local doping. The analysis of the results shows that the formation of self-organized spatial architectures in the process of HVPE is caused by the generation of V-pits and their subsequent overgrowth accompanied by the growth in variable direction. It is demonstrated for the first time that the electrical and luminescence properties of HVPE-grown GaN are spatially modulated throughout, including islands between overgrown V-pit regions. The dependence of doping upon growth direction is confirmed by the micro-cathodoluminescence characterization of HVPE-grown pencil-like microcrystals exposing various crystallographic planes along the tip. These results are indicative of new possibilities for defect engineering in gallium nitride and for three-dimensional spatial nanostructuring of this important electronic material by controlling the growth direction.

Cuvinte-cheie
Gallium nitride, Luminescence, Modulation, single crystals