Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications
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BRANIŞTE, Tudor; CIERS, Joachim; MONAICO, Eduard; MARTÍN, Denis; CARLIN, Jean Franc; URSAKI, Veacheslav; SERGENTU, Vladimir; TIGINYANU, Ion; GRANDJEAN, Nicolas. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications. In: Superlattices and Microstructures. 2017, nr. 102, pp. 221-234. ISSN 0749-6036.
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Superlattices and Microstructures
Numărul 102 / 2017 / ISSN 0749-6036

Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications


DOI: 10.1016/j.spmi.2016.12.041
Pag. 221-234

Branişte Tudor1, Ciers Joachim2, Monaico Eduard1, Martín Denis2, Carlin Jean Franc2, Ursaki Veacheslav3, Sergentu Vladimir4, Tiginyanu Ion13, Grandjean Nicolas2
 
1 Technical University of Moldova,
2 Universitatea Politehnică Federală din Lausanne,
3 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
4 Institute of Applied Physics, Academy of Sciences of Moldova
 
Disponibil în IBN: 15 decembrie 2017


Rezumat

In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

Cuvinte-cheie
Bragg reflectors, Electrochemical etching, GaN,

Micro-reflectivity measurements, Multilayer porous structures, Transfer matrix analysis