Features of luminescence in semiconductor quantum wires in external electric and magnetic fields
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2020-12-07 12:13
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SINYAVSKII, Elerlanj, KOSTYUKEVICH, Nina. Features of luminescence in semiconductor quantum wires in external electric and magnetic fields. In: Microelectronics and Computer Science, Ed. 9, 19-21 octombrie 2017, Chisinau. Chișinău, Republica Moldova: Universitatea Tehnică a Moldovei, 2017, Ediția 9, pp. 80-83. ISBN 978-9975-4264-8-0.
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Microelectronics and Computer Science
Ediția 9, 2017
Conferința "Microelectronics and Computer Science"
9, Chisinau, Moldova, 19-21 octombrie 2017

Features of luminescence in semiconductor quantum wires in external electric and magnetic fields

Pag. 80-83

Sinyavskii Elerlanj1, Kostyukevich Nina2
 
1 Institute of Applied Physics, Academy of Sciences of Moldova,
2 T.G. Shevchenko State University of Pridnestrovie, Tiraspol
 
 
Disponibil în IBN: 23 octombrie 2017


Rezumat

The interband optical transitions in quantum wires in a model of a parabolic potential in an electric and magnetic field directed perpendicular to the nanowire axis are studied theoretically. The frequency dependences of the luminescence intensity of light are calculated when the interaction of carriers with a rough surface and with long-wave acoustic oscillations is taken into account. Graphs of the dependence of the luminescence half-width on the wire radius are obtained and a comparison with the experiment is made.

Cuvinte-cheie
interband optical transitions, nanowires, Luminescence, absorption, rough surface