Growth and characterization of Eu doped GaSe single crystals by X-ray diffraction and raman spectroscopy

Untila Dumitru; Evtodiev Igor; Caraman Iuliana; Kantser Valeriu; Spalatu Nicolae; Dmitroglo Liliana; Evtodiev Silvia; Spoială Dorin; Rotaru Irina; Gashin Peter A.

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621.315.592:548.55 (1)

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UNTILA, Dumitru, EVTODIEV, Igor, CARAMAN, Iuliana, KANTSER, Valeriu, SPALATU, Nicolae, DMITROGLO, Liliana, EVTODIEV, Silvia, SPOIALĂ, Dorin, ROTARU, Irina, GASHIN, Peter A.. Growth and characterization of Eu doped GaSe single crystals by X-ray diffraction and raman spectroscopy. In: Studia Universitatis Moldaviae (Seria Ştiinţe Exacte şi Economice), 2017, nr. 2(102), pp. 62-68. ISSN 1857-2073.

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Studia Universitatis Moldaviae (Seria Ştiinţe Exacte şi Economice)

Numărul 2(102) / 2017 / ISSN 1857-2073 /ISSNe 2345-1033

Growth and characterization of Eu doped GaSe single crystals by X-ray diffraction and raman spectroscopy

CZU: 621.315.592:548.55

Pag. 62-68

Untila Dumitru¹², Evtodiev Igor²¹, Caraman Iuliana³, Kantser Valeriu¹², Spalatu Nicolae⁴, Dmitroglo Liliana², Evtodiev Silvia², Spoială Dorin², Rotaru Irina², Gashin Peter A.²

¹ Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu" of the Academy of Sciences of Moldova,
² Moldova State University,
³ "Vasile Alecsandri" University of Bacau,
⁴ Tallinn University of Technology

Disponibil în IBN: 24 august 2017

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GaSe single crystals doped with Eu (0.025, 0.05, 0.5, 1.0 and 3.0 at%) were grown by Bridgman method using Ga, Se and Eu elementary components. The crystalline structure and vibration modes of the GaSe: Eu crystals lattice were studied by X-ray diffraction and Raman spectroscopy. Eu atoms arranged in the van der Waals space of GaSe: Eu crystals form Eu-Se valence bonds and restructure hexagonal lattice of GaSe leading to EuGa2Se4 crystallites formation. Defects generated by EuGa2Se4 crystallites lead to broadening and shifting of single phonon peaks present in Raman spectra towards shorter wavenumbers, and at the same time, activate the longitudinal optical vibrations of EuSe sublattice.

Monocristalele de GaSe nedopate și dopate cu Eu în cantități de 0.025, 0.05, 0.5, 1.0 și 3.0% at. au fost crescute prin metoda Bridgman din componente elementare Ga, Se și Eu. Structura cristalină și modelele de vibrație a rețelei crista-lelor de GaSe:Eu au fost studiate prin difracția razelor X și spectroscopia Raman. Atomii de Eu localizați în spaţiul van der Waals al cristalelor de GaSe:Eu creează legături de valență Eu-Se și restructurează rețeaua hexagonală a compusului GaSe, conducând la formarea cristalitelor de EuGa2Se4. Defectele generate de cristalitele de EuGa2Se4 duc la lărgirea și deplasarea benzilor monofononice de difuzie Raman spre numere de undă mici și, totodată, activează vibraţiile optice longitudinale ale subreţelei EuSe.

Cuvinte-cheie
GaSe, doping, EU, XRD,

Raman.

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