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 SM ISO690:2012ВЛАСОВ, С., НАСИРОВ, А., МАМАТКАРИМОВ, О., ЭРГАШЕВА, М.. Немонотонность вольт-фарадных характеристик структур металл-стекло-полупроводник . In: Электронная обработка материалов, 2008, nr. 3(44), pp. 99-101. ISSN 0013-5739. |
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 Электронная обработка материалов |
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| Numărul 3(44) / 2008 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 99-101 | ||||||
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The nature of not monotony high-frequency volt-farad characteristics of the structures metal-glasssemiconductor is investigated. It is shown that the not monotonous change of capacity of the metal-glasssemiconductor at inverse voltage can be caused by presence of structural defect acseptors character in glass, in a layer adjoining to the separating border of the glass-semiconductor. |
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