| Conţinutul numărului revistei |
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 732 0 |
 SM ISO690:2012ABBASOV, Sh., AGAVERDIIEVA, G., BAITSAR, A., FARADZHOVA, U., MEKHDEVIA, G.. Структура и важнейшие электрофизические свойства тонких пленок Ge1-Х - SiХ. In: Электронная обработка материалов, 2009, nr. 2(45), pp. 98-104. ISSN 0013-5739. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Электронная обработка материалов |
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| Numărul 2(45) / 2009 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 98-104 | ||||||
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In this work the methodology of getting thin layers on the basis of Ge1-xSix was used. The thin layers formation speed is in 1 Å/c 1000 Å/c. The ability of the quasi – amorphous condition of thin layers on the basis of Ge0,85Si0,15 (h∼100nm) to stay up to 565 K temperature was determined. It has been experimentally established that electron irradiation with stress leads to accelerated crystallization in the film and decrease of electro conductivity. |
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