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 SM ISO690:2012ГОДЖАЕВ, Эльдар, ГЮЛЬМАМЕДОВ, К., KHALILOVA, Kh., ГУЛИЕВА, C.. Эффект переключения на тонких пленках TlInSe2. In: Электронная обработка материалов, 2011, nr. 5(47), pp. 18-22. ISSN 0013-5739. |
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 Электронная обработка материалов |
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| Numărul 5(47) / 2011 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 18-22 | ||||||
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The article deals with the results of research of current-voltage characteristic of TlInSe2 thin films in a static mode depending on the length and the area of the contact. It has been found out that the effect of switching with memory is observed on TlInSe2 thin films and that in order to get a stable switching it is necessary for the threshold current not to exceed the current of stabilization of a state with non-uniform current distribution over the cross-section. |
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