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 SM ISO690:2012ИЛИЕВ, Х., SAPARNIYAZOVA, Z., ИСМАЙЛОВ, К., САТТАРОВ, О., NIGMONKHADZHAEV, S.. Взаимодействие радиационных дефектов с кластерами атомов никеля в кремнии. In: Электронная обработка материалов, 2011, nr. 5(47), pp. 12-14. ISSN 0013-5739. |
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 Электронная обработка материалов |
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| Numărul 5(47) / 2011 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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| Pag. 12-14 | ||||||
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In the article on the base of infrared microscopic investigations it is shown that clusters of nickel atoms impurity are equally distributed on the whole volume of the silicon crystal, as well as at gamma irradiation by changing density of clusters in silicon it is possible to control the concentration of electroactive atoms, as well clusters structure of nickel. It is shown, that presence of clusters in lattice essential increase radiation stability of silicon. |
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