Luminescence of porous semiconductor media covered with metallic films
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
650 5
Ultima descărcare din IBN:
2020-09-16 10:14
Căutarea după subiecte
similare conform CZU
535.371+535.374 (1)
Propagare. Reflecţie. Refracţie. Absorbţie. Emisie (99)
SM ISO690:2012
. Luminescence of porous semiconductor media covered with metallic films. In: Moldavian Journal of the Physical Sciences, 2016, nr. 3-4(15), pp. 176-183. ISSN 1810-648X.
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Moldavian Journal of the Physical Sciences
Numărul 3-4(15) / 2016 / ISSN 1810-648X /ISSNe 2537-6365

Luminescence of porous semiconductor media covered with metallic films
CZU: 535.371+535.374

Pag. 176-183

 
Technical University of Moldova
 
 
Disponibil în IBN: 26 ianuarie 2017


Rezumat

Porous GaP and InP layers with a pore diameter and a skeleton wall thickness of about 50 nm are prepared on bulk substrates by anodization; microgranular ZnO structures are produced by thermal treatment of ZnTe single crystals in this work. The effect of coating in the prepared samples with thin Au, Cu, Ag and ITO films on their luminescence is investigated; the results are discussed in terms of increased energy transfer between the excited electron_hole pairs and surface plasmons where the surface plasmon resonance matches the energy of photoluminescence bands.