Памяти Геоpгия Владимиpовича Чалого
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62(478) (57)
Inginerie. Tehnică în general (1812)
SM ISO690:2012
ГPИЦАЙ, М.А.. Памяти Геоpгия Владимиpовича Чалого. In: Problemele Energeticii Regionale. 2016, nr. 3(32), pp. 126-129. ISSN 1857-0070.
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Problemele Energeticii Regionale
Numărul 3(32) / 2016 / ISSN 1857-0070

Памяти Геоpгия Владимиpовича Чалого

CZU: 62(478)
Pag. 126-129

Гpицай М.А.
Институт энергетики АНМ
Disponibil în IBN: 20 ianuarie 2017

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<oai_dc:dc xmlns:dc='http://purl.org/dc/elements/1.1/' xmlns:oai_dc='http://www.openarchives.org/OAI/2.0/oai_dc/' xmlns:xsi='http://www.w3.org/2001/XMLSchema-instance' xsi:schemaLocation='http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd'>
<dc:creator>Canţer, V.G.</dc:creator>
<dc:description xml:lang='en'>A review of the recent results concerning the new concepts and achievements in the area 
of  semiconductor  spintronics  (or  spin-electronics)  is  presented.  Because  spin-orbit 
interactions (SOI) couple electron spins to electric fields and allow electrical manipulation of 
electron  spins  and  electrical  detection  of  spin  dynamics  they  form  the  fundamental 
mechanisms of new effects and the basis of different proposals for new spintronic devices. In 
addition  to  known  channels  of  SOI  in  semiconductor  materials  and  heterostructures,  new 
terms of SOI,  induced by  interband  interaction  through  the  electrical polarization or  atomic 
displacement  like  optical  phonons  are  proposed  and  analyzed  in  the  paper.  These  SOI 
  7mechanisms  have  the  physical  nature  in  the  relativistic  quantum  mechanics  with  Lorentz 
boosts  and  this  aspect  is  highlighted.  Some  particularities  of  the  electronic  states  of 
semiconductor quantum wells (QW) related to the intrinsic Rashba SOI and Rashba like S vbOI 

induced by  the electrical polarization (EP) are studied. Size quantization states are shown  to 
transform into interface ones at some value of the in-plane QW wave vector under SOI effect. 
Tunneling  characteristics  of  single  barrier  heterostructure  are  analyzed  in  the  conditions  of 
both  types of SOIs  and  are established  to be  spin-dependent under SOI  induced by  the EP. 
 Several aspects dealing with  the new discovered  intrinsic  spin and angular momentum Hall 
effects (SHE and AMHE) are revealed. The SHE is investigated in a two dimensional electron 
system with  the SOI of both  intrinsic and EP  induced  types. New peculiarities of SHE  and 
AMHE  ,  induced  by  interband  interaction  of  heavy  and  light  holes  are  studied  in  p-doped 
semiconductors  with  band  degeneracy  in  the  framework  of  generalized   Luttinger 

Hamiltonian. Spin-conductivity  induced by  the EP  is  shown  to proportional  to difference of 
the inverse values of the hole wave vectors.   </dc:description>
<dc:source>Moldavian Journal of the Physical Sciences 4 (1) 5-24</dc:source>
<dc:title>Spin-orbit interaction and spintronics effects in semiconductor structures</dc:title>