Photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds
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DUMCHENKO, Dumitru, LEVCENKO, Sergiu, HUANG, Ying-Sheng, FIRSZT, Franciszek, HSU, Hung-Pin, TIONG, Kwong-Kaw. Photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds. In: Moldavian Journal of the Physical Sciences, 2011, nr. 1(10), pp. 44-51. ISSN 1810-648X.
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Moldavian Journal of the Physical Sciences
Numărul 1(10) / 2011 / ISSN 1810-648X /ISSNe 2537-6365

Photoluminescence, modulation spectroscopy and surface photovoltage characterization of quaternary Zn1-x-yCdxMgySe compounds

Pag. 44-51

Dumchenko Dumitru1, Levcenko Sergiu1, Huang Ying-Sheng1, Firszt Franciszek2, Hsu Hung-Pin3, Tiong Kwong-Kaw1
 
1 National Taiwan University of Science and Technology, Taipei,
2 Nicolaus Copernicus University,
3 Ming Chi University of Technology
 
 
Disponibil în IBN: 16 decembrie 2013
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An optical characterization of wurtzite Zn1-x-yCdxMgySe crystalline alloys grown by the modified high-pressure Bridgman method has been carried out by temperature-dependent photoluminescence (PL) and contactless electroreflectance (CER) in the temperature range of 10300 K, and photoreflectance (PR) measurements between 300400 K as well as surface photovoltage spectroscopy (SPS) at 300 K. Low temperature PL spectra of the investigated samples consist of an excitonic line, the “edge emission” due to radiative recombination of shallow donor-acceptor pairs and a broad band related to recombination through deep level defects. Three excitonic features, A, B and C, in the vicinity of band edge were observed in the CER and PR spectra. The peak positions of band-edge excitonic features in the PL spectra are shifted slightly towards lower energies as compared to the lowest corresponding transition energies of A exciton determined from CER and PR data. The increase of the CER-PL shift with the increasing of Mg content in the investigated crystals is explained by the rising of compositional disorder causing the smearing of the band-edge energies. In addition, the coincidence of energy positions of features obtained from SPS measurements with excitonic transition energies E0A determined from CER/PR data at 300 K confirm the proper surface treatment of the samples.

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<cfAbstr cfLangCode='EN' cfTrans='o'>An  optical  characterization  of wurtzite  Zn1-x-yCdxMgySe  crystalline  alloys  grown  by  the 
modified  high-pressure  Bridgman  method  has  been  carried  out  by  temperature-dependent 
photoluminescence  (PL)  and  contactless  electroreflectance  (CER)  in  the  temperature  range  of 
10300  K,  and  photoreflectance  (PR)  measurements  between  300400  K  as  well  as  surface 
photovoltage  spectroscopy  (SPS)  at  300  K.  Low  temperature  PL  spectra  of  the  investigated 
samples  consist  of  an  excitonic  line,  the  “edge  emission”  due  to  radiative  recombination  of 

shallow  donor-acceptor  pairs  and  a  broad  band  related  to  recombination  through  deep  level 
defects. Three excitonic features, A, B and C,  in  the vicinity of band edge were observed  in  the 
CER  and PR  spectra. The peak positions of band-edge excitonic  features  in  the PL  spectra are 
shifted  slightly  towards  lower  energies  as  compared  to  the  lowest  corresponding  transition 
energies of A exciton determined from CER and PR data. The increase of the CER-PL shift with 
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transition  energies E0A determined  from  CER/PR  data  at  300  K  confirm  the  proper  surface 
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