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 SM ISO690:2012ARUSHANOV, Ernest, LISUNOV, Konstantin, SCHUMANN, Joachim, VINZELLBERG, H. Unconventional metal-insulator transition in RexSi1-x. In: Moldavian Journal of the Physical Sciences, 2010, nr. 3-4(9), pp. 252-256. ISSN 1810-648X. |
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| Moldavian Journal of the Physical Sciences | |
| Numărul 3-4(9) / 2010 / ISSN 1810-648X /ISSNe 2537-6365 | |
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| Pag. 252-256 | |
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| Rezumat | |
Low-temperature resistivity of the amorphous RexSi1-x thin films at x < xc is governed
by the Mott and the Shklovskii-Efros variable-range hopping (VRH) conductivity mecha-
nisms, where xc ≈ 0.327 corresponds to the metal-insulator transition (MIT). The critical exponent of the dielectric permittivity, η = 2.1 ± 0.2, is found to be in agreement with the
theoretical prediction, η = 2. The critical exponent of the correlation length, ν ≈ 0.8 – 1.1
close to the expected value of unity is obtained under an assumption of a strong underbarrier
scattering of hopping charge carriers.
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