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SM ISO690:2012 DJELLAL, L., ZAHAGUE, A., BELLAL, B., DOULACHE, M., TRARI, M.. Photoelectrochemical Characterization of Chalcopyrite Cu(In0.6Ga0.4)3Se5. In: Электронная обработка материалов, 2015, nr. 3(51), pp. 67-72. ISSN 0013-5739. |
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Электронная обработка материалов | ||||||
Numărul 3(51) / 2015 / ISSN 0013-5739 /ISSNe 2345-1718 | ||||||
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CZU: 544 | ||||||
Pag. 67-72 | ||||||
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The compound Cu(In0.6Ga0.4)3Se5 prepared by fusion in sealed tube is a wide band gap semiconductor; it crystallizes in the P-chalcopyrite structure with a direct transition of 1.42 eV. Its transport properties exhibit a semi-conducting behavior, which seem to be not intrinsic but rather attributed to selenium vacancies, and the conductivity is well described by small-polaron hopping: = 0exp{-29/kT}(cm)-1 with an effective mass of ~ 2 m0. The thermo-power is negative and changes little with temperature, suggesting that the conduction mechanism is mostly due to electron hopping. The analyzed material shows a chemical stability over a broad pH range; the semilogarithmic plot in KOH solution displays an exchange current density of 27 μAcm-2 and a corrosion potential of -0.204 VSCE. The capacitance measurement (C-2–V) exhibits a linear behavior, characteristic of n type conductivity, from which a flat band potential of -0.530 VSCE and an electron density of 3.49 1020 cm-3 are determined. The Nyquist plot shows a semicircle due to the predominance of the bulk contribution (= 127 cm2) and a low density of surface states. The centre is localized below the real axis with a depression angle of 12° ascribed to a constant phase element (CPE). The straight line in the low frequencies region is due to the Warburg diffusion. |
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Cuvinte-cheie chalcopyrite Cu(In0.6Ga0.4)3Se5, small-polaron hopping, photoelectrochemical characterization, electrochemical impedance spectroscopy |
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