| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
 |
 809 3 |
| Ultima descărcare din IBN: 2020-10-14 15:54 |
 SM ISO690:2012LEBOURHIS, E., PATRIARCHE, G.. Nanoindentation response of semiconductors. In: Moldavian Journal of the Physical Sciences, 2008, nr. 4(7), pp. 456-465. ISSN 1810-648X. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Moldavian Journal of the Physical Sciences | ||||||
| Numărul 4(7) / 2008 / ISSN 1810-648X /ISSNe 2537-6365 | ||||||
|
||||||
| Pag. 456-465 | ||||||
|
||||||
 Descarcă PDF |
||||||
| Rezumat | ||||||
The paper reviews the nanoindentation behaviour of semiconductors under concentrated
load. We consider first, fundamental aspects regarding the mechanical resistance to contact
loading of semiconductor single crystals (indentation strain, hardness-yield stress relationship). Then, the paper summarizes recent studies regarding nanoindentation structure and
geometrical size effect.
|
||||||
|
|
|
|
