Scattering mechanisms of charge carriers in gallium antimonide doped with iron
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
1001 2
Ultima descărcare din IBN:
2023-11-16 10:51
SM ISO690:2012
GHEORGHITA, Eugene, GUŢULEAC, Leonid, MELINTE, Victoria, ZLOTEA, Olga, POSTOLACHI, Igor. Scattering mechanisms of charge carriers in gallium antimonide doped with iron. In: Moldavian Journal of the Physical Sciences, 2008, nr. 3(7), pp. 375-381. ISSN 1810-648X.
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Moldavian Journal of the Physical Sciences
Numărul 3(7) / 2008 / ISSN 1810-648X /ISSNe 2537-6365

Scattering mechanisms of charge carriers in gallium antimonide doped with iron


Pag. 375-381

Gheorghita Eugene, Guţuleac Leonid, Melinte Victoria, Zlotea Olga, Postolachi Igor
 
Tiraspol State University
 
Disponibil în IBN: 16 decembrie 2013


Rezumat

Obtaining, homogenizing, and purifying technologic conditions for gallium antimonide doped with iron and simultaneously doped with iron and tellurium are described. According to the research of galvanometric features of nondoped gallium antimonide and gallium antimonide doped with 3 at % iron concentration for the temperature range of 4.2÷300 K, the mechanisms of charge carrier scattering are analyzed. It is demonstrated that for explanation of experimental data obtained for the U = U(T) function it is necessary to involve an additional mechanism of charge carrier scattering specific to the inclusions formed in gallium antimonide – clusters. Using the physical conceptions of this mechanism, the basic characteristics of scattering of the charge carriers determined by clusters are determined.