Prin tratament termic la temperatura 753 K şi 853 K a plăcilor monocristaline de GaSe în vapori de Cd, timp de la 10 min pînă la 24 h, s-a obţinut un material compus din cristalite de CdSe şi GaSe cu dimensiuni medii de 34 nm şi, respectiv, 30 nm. În rezultatul interacţiunii atomilor de Cd cu atomii de Se, atît pe suprafaţa exterioară, cît şi la interfaţa dintre împachetările Se-Ga-Ga-Se, se formează straturi de CdSe. Cristalitele de CdSe pe suprafaţă cresc sub forma de plăci pe direcţia axei cristalografice C6. Spectrele de fotoluminescenţă (PL) la temperaturi de 78 K şi 300 K ale compozitului, conţin benzile dominante din spectrele de emisie luminescentă a componentelor compozitului GaSe şi CdSe.

The photoluminescence of lamellar GaSe single crystals obtained by vapor phase and electrolythic intercalation from aqueous solution of CdCl2 was studied. By heat treatment at 753 K and 853 K of GaSe single crystal plates in Cd vapors during from 10 min to 24 hrs a new material, composed from CdSe and GaSe crystallites with the average dimensions of 34 nm and 30 nm respectively, was obtained. As a result of Cd atoms interaction with Se atoms the CdSe layers are formed on the external surface as well at Se-Ga-Ga-Se packing external surface. Cd2 ions electrochemically intercalated do not modify of the cristaline structure of the lamellar nanocomposite. CdSe crystallites on the surface are growing in the form of plates in the direction of C6 crystallographic axis. The photoluminescence PL spectrum of the obtained from Cd vapors compoite at the temperatures of 78 K and 300 K contains dominant bands of the luminescence emission spectrum of GaSe and CdSe composite components but the PL spectrum of the composite obtained from H2OCdCl2 solution contains the non-phononic emission bands of the indirect non-excited excitons and of the indirect localized excitons.