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<creators>
<creator>
<creatorName>Dobîndă, I.I.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Pavlenco, V.I.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
<creator>
<creatorName>Belousov, I.V.</creatorName>
<affiliation>Institutul de Fizică Aplicată al AŞM, Moldova, Republica</affiliation>
</creator>
</creators>
<titles>
<title xml:lang='en'>On the determination of quantum dot sizes by spectroscopic methods</title>
</titles>
<publisher>Instrumentul Bibliometric National</publisher>
<publicationYear>2014</publicationYear>
<relatedIdentifier relatedIdentifierType='ISSN' relationType='IsPartOf'>1810-648X</relatedIdentifier>
<subjects>
<subject schemeURI='http://udcdata.info/' subjectScheme='UDC'>537.37:538.9</subject>
</subjects>
<dates>
<date dateType='Issued'>2014-12-01</date>
</dates>
<resourceType resourceTypeGeneral='Text'>Journal article</resourceType>
<descriptions>
<description xml:lang='en' descriptionType='Abstract'>The dependences of the fundamental transition on the quantum dot size obtained experimentally at various temperatures using different measuring methods are analyzed and compared. A simple analytical relationship for approximation of these dependences is proposed. The possibility to extrapolate the results for the case of arbitrary temperature is discussed.
Semiconductor low-dimensional systems, in particular semiconductor quantum dots, attract a considerable interest due to the substantial size dependence of the energy of quantum transitions in them. This feature is promising for development of absorption and luminescent materials necessary for solving a wide range of applied problems from optoelectronic imaging and data transfer devices to biological fluorescence labels [1, 2].</description>
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