The numerical calculations of the electrical potential distribution and current passing in the contacts of the high temperature superconductor (HTSC) with semiconductors silicon (Si) and indium antimonite (InSb) were carried out. There were analyzed the possibilities to prepare the diode detectors (DD) based on these contacts and working at liquid nitrogen temperature 77.4K. The comparison of structures based on Si and InSb was carried out. The obtained results were explained taking into account the physical properties of these semiconductors. Both advantages and disadvantages of these materials were discussed. The optimum application spheres were determined for Si and InSb accordingly. The comparison of the obtained results with existent literature data shows that the proposed DD can be 10÷100 times better than the existing devices. Therefore, these DD are perspective for cryogenic electronics, and their preparation is a problem of today.