Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in M–band of luminescence
Închide
Conţinutul numărului revistei
Articolul precedent
Articolul urmator
717 1
Ultima descărcare din IBN:
2020-10-17 12:19
SM ISO690:2012
KHADZHI, Peter. Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in M–band of luminescence. In: Moldavian Journal of the Physical Sciences, 2005, nr. 4(4), pp. 399-407. ISSN 1810-648X.
EXPORT metadate:
Google Scholar
Crossref
CERIF

DataCite
Dublin Core
Moldavian Journal of the Physical Sciences
Numărul 4(4) / 2005 / ISSN 1810-648X /ISSNe 2537-6365

Optical properties of semicomductor in exciton range of spectrum in presence of strong pump pulse in M–band of luminescence


Pag. 399-407

Khadzhi Peter
 
Tiraspol State University
 
 
Disponibil în IBN: 8 decembrie 2013


Rezumat

The behavior of the semiconductor dielectric susceptibility in the exciton range of spectrum due to the interaction with photons of a weak test pulse under the stationary action of a strong pump pulse in the range of M–band of luminescence is investigated. It is shown that the well pronounced Autler–Townes effect occurs at the exciton resonance. The position of the absorption peaks is determined by the amplitude and frequency of the pump pulse.