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 SM ISO690:2012RAEVSCHI, Simion, COMPAN, Mihail, ZHILYAEV, Yurii, GORCEAC, Leonid, BOTNARIUC, Vasile. Evoluarea particulelor dispersate de ALN depuse pe si prin metoda HVPE la etapa de formare a stratului continuu
. In: Studia Universitatis Moldaviae (Seria Ştiinţe Exacte şi Economice), 2011, nr. 2(42), pp. 84-88. ISSN 1857-2073. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Studia Universitatis Moldaviae (Seria Ştiinţe Exacte şi Economice) | ||||||
| Numărul 2(42) / 2011 / ISSN 1857-2073 /ISSNe 2345-1033 | ||||||
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| Pag. 84-88 | ||||||
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Evolution of growth of the disperse particles of AlN which has been grown up on substrates of silicon during formation of a continuous layer are studies by AFM (Atomic Force Microscopy ) method. Layers have been grown up by HVPE (Hydride Vapor Phase Epitaxy) method at 1100oC. It is established: a) nunucleation occurs according to three dimensional model; b) layers are formed of two categories of disperse particles; c) growth rate of categories differ; d) at an initial stage of growth there is a latent period of time when superficial concentration of disperse particles remains to a constant. |
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