Negative differential resistance in ZnO-based resonant tunneling diodes
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SIRKELI, Vadim, VATAVU, Sergiu, YILMAZOGLU, Oktay, PREU, Sascha, HARTNAGEL, Hans Ludwig. Negative differential resistance in ZnO-based resonant tunneling diodes. In: International Conference on Infrared, Millimeter, and Terahertz Waves: IRMMW-THz 2019, Ed. 44, 1-6 septembrie 2019, Paris. Washington: IEEE Computer Society, 2019, Ediția 44, p. 0. ISBN 978-153868285-2. ISSN 21622027. DOI: https://doi.org/10.1109/IRMMW-THz.2019.8874570
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International Conference on Infrared, Millimeter, and Terahertz Waves
Ediția 44, 2019
Conferința "44th International Conference on Infrared, Millimeter, and Terahertz Waves"
44, Paris, Franța, 1-6 septembrie 2019

Negative differential resistance in ZnO-based resonant tunneling diodes

DOI: https://doi.org/10.1109/IRMMW-THz.2019.8874570

Pag. 0-0

Sirkeli Vadim12, Vatavu Sergiu2, Yilmazoglu Oktay1, Preu Sascha1, Hartnagel Hans Ludwig1
 
1 Technical University Darmstadt,
2 Moldova State University
 
Disponibil în IBN: 15 martie 2023


Rezumat

We present the results of a simulation study of resonant tunneling transport of non-polar m-plane ZnO/ZnMgO quantum structures with double and triple quantum barriers. It is found that in current density-voltage characteristics of such devices a region is present with negative differential resistance and this feature can be used for the generation of terahertz waves. The best performance at room temperature with output power of 912 μW @ 1 THz is derived for the non-polar m-plane ZnO/ZnMgO structures with triple quantum barriers and optimized design.

Cuvinte-cheie
II-VI semiconductors, Negative resistance, Quantum chemistry, Resonant tunneling, Terahertz waves, zinc oxide