Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade

Dragoman Mircea L.; Dinescu Adrian; Avram Andrei; Dragoman Daniela; Vulpe Silviu; Aldrigo Martino; Braniste Tudor; Suman Victor; Rusu Emil; Tiginyanu Ion

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2023-07-23 22:00

SM ISO690:2012

DRAGOMAN, Mircea L., DINESCU, Adrian, AVRAM, Andrei, DRAGOMAN, Daniela, VULPE, Silviu, ALDRIGO, Martino, BRANISTE, Tudor, SUMAN, Victor, RUSU, Emil, TIGINYANU, Ion. Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade. In: Nanotechnology, 2022, vol. 33, pp. 1-7. ISSN 0957-4484. DOI: https://doi.org/10.1088/1361-6528/ac7cf8

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Nanotechnology

Volumul 33 / 2022 / ISSN 0957-4484

Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade

DOI:https://doi.org/10.1088/1361-6528/ac7cf8

Pag. 1-7

Dragoman Mircea L.¹, Dinescu Adrian¹, Avram Andrei¹, Dragoman Daniela²³, Vulpe Silviu¹, Aldrigo Martino¹, Braniste Tudor⁴, Suman Victor⁵, Rusu Emil⁵, Tiginyanu Ion⁶⁷

¹ National Institute for Research and Development in Microtechnology, IMT-Bucharest,
² University of Bucharest,
³ Romanian Academy of Science,
⁴ Technical University of Moldova,
⁵ Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu",
⁶ National Center for Materials Study and Testing, Technical University of Moldova,
⁷ Academy of Sciences of Moldova

Disponibil în IBN: 5 august 2022

Rezumat

In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for increasing positive back-gate voltages up to 6 V, whereas the off-state is attained for negative back-gate voltages not exceeding -6 V, the on/off ratio being in the range 102-103 depending on FET dimensions. The SnS FETs show a subthreshold slope (SS) below 60 mV/decade thanks to the in-plane ferroelectricity of SnS and attaining a minimum value SS = 21 mV/decade. Moreover, the low SS values can be explained by the existence of a negative value of the capacitance of the SnS thin film up to 10 GHz (for any DC bias voltage between 1 and 5 V), with the minimum value being -12.87 pF at 0.1 GHz.

Cuvinte-cheie
2D materials ferroelectricity, ferroelectrics, microwaves, RF magnetron sputtering, Semiconductors, thin films, tin sulfide

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<dc:creator>Dragoman, M.</dc:creator>
<dc:creator>Dinescu, A.</dc:creator>
<dc:creator>Avram, A.</dc:creator>
<dc:creator>Dragoman, D.</dc:creator>
<dc:creator>Vulpe, S.</dc:creator>
<dc:creator>Aldrigo, M.</dc:creator>
<dc:creator>Branişte, F.V.</dc:creator>
<dc:creator>Suman, V.</dc:creator>
<dc:creator>Rusu, E.V.</dc:creator>
<dc:creator>Tighineanu, I.M.</dc:creator>
<dc:date>2022-10-01</dc:date>
<dc:description xml:lang='en'><p>In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for increasing positive back-gate voltages up to 6 V, whereas the off-state is attained for negative back-gate voltages not exceeding -6 V, the on/off ratio being in the range 102-103 depending on FET dimensions. The SnS FETs show a subthreshold slope (SS) below 60 mV/decade thanks to the in-plane ferroelectricity of SnS and attaining a minimum value SS = 21 mV/decade. Moreover, the low SS values can be explained by the existence of a negative value of the capacitance of the SnS thin film up to 10 GHz (for any DC bias voltage between 1 and 5 V), with the minimum value being -12.87 pF at 0.1 GHz.</p></dc:description>
<dc:identifier>10.1088/1361-6528/ac7cf8</dc:identifier>
<dc:source>Nanotechnology  () 1-7</dc:source>
<dc:subject>2D materials ferroelectricity</dc:subject>
<dc:subject>ferroelectrics</dc:subject>
<dc:subject>microwaves</dc:subject>
<dc:subject>RF magnetron sputtering</dc:subject>
<dc:subject>Semiconductors</dc:subject>
<dc:subject>thin films</dc:subject>
<dc:subject>tin sulfide</dc:subject>
<dc:title>Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade</dc:title>
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