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 SM ISO690:2012DRAGOMAN, Mircea L.; DINESCU, Adrian; AUTOR, Nou; DRAGOMAN, Daniela; VULPE, Silviu; ALDRIGO, Martino; BRANIŞTE, Tudor; SUMAN, Victor; RUSU, Emil; TIGINYANU, Ion. Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade. In: Nanotechnology. 2022, nr. 40(33), pp. 1-7. ISSN 0957-4484. 10.1088/1361-6528/ac7cf8 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Nanotechnology | |
| Numărul 40(33) / 2022 / ISSN 0957-4484 | |
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| DOI: https://doi.org/10.1088/1361-6528/ac7cf8 | |
| Pag. 1-7 | |
| Rezumat | |
In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for increasing positive back-gate voltages up to 6 V, whereas the off-state is attained for negative back-gate voltages not exceeding -6 V, the on/off ratio being in the range 102-103 depending on FET dimensions. The SnS FETs show a subthreshold slope (SS) below 60 mV/decade thanks to the in-plane ferroelectricity of SnS and attaining a minimum value SS = 21 mV/decade. Moreover, the low SS values can be explained by the existence of a negative value of the capacitance of the SnS thin film up to 10 GHz (for any DC bias voltage between 1 and 5 V), with the minimum value being -12.87 pF at 0.1 GHz. |
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| Cuvinte-cheie 2D materials ferroelectricity, ferroelectrics, microwaves, RF magnetron sputtering, Semiconductors, thin films, tin sulfide |
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