Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade
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DRAGOMAN, Mircea L.; DINESCU, Adrian; AUTOR, Nou; DRAGOMAN, Daniela; VULPE, Silviu; ALDRIGO, Martino; BRANIŞTE, Tudor; SUMAN, Victor; RUSU, Emil; TIGINYANU, Ion. Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade. In: Nanotechnology. 2022, nr. 40(33), pp. 1-7. ISSN 0957-4484.
10.1088/1361-6528/ac7cf8
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Nanotechnology
Numărul 40(33) / 2022 / ISSN 0957-4484

Ultrathin tin sulfide field-effect transistors with subthreshold slope below 60 mV/decade

DOI: https://doi.org/10.1088/1361-6528/ac7cf8

Pag. 1-7

Dragoman Mircea L.1, Dinescu Adrian1, Autor Nou1, Dragoman Daniela23, Vulpe Silviu1, Aldrigo Martino1, Branişte Tudor4, Suman Victor5, Rusu Emil5, Tiginyanu Ion67
 
1 National Institute for Research and Development in Microtechnology, IMT-Bucharest,
2 University of Bucharest,
3 Romanian Academy of Science,
4 Technical University of Moldova,
5 Institute of the Electronic Engineering and Nanotechnologies "D. Ghitu",
6 National Center for Materials Study and Testing, Technical University of Moldova,
7 Academia de Ştiinţe a Moldovei
 
Disponibil în IBN: 5 august 2022


Rezumat

In this paper, we present for the first time a field-effect-transistor (FET) having a 10 nm thick tin sulfide (SnS) channel fabricated at the wafer scale with high reproducibility. SnS-based FETs are in on-state for increasing positive back-gate voltages up to 6 V, whereas the off-state is attained for negative back-gate voltages not exceeding -6 V, the on/off ratio being in the range 102-103 depending on FET dimensions. The SnS FETs show a subthreshold slope (SS) below 60 mV/decade thanks to the in-plane ferroelectricity of SnS and attaining a minimum value SS = 21 mV/decade. Moreover, the low SS values can be explained by the existence of a negative value of the capacitance of the SnS thin film up to 10 GHz (for any DC bias voltage between 1 and 5 V), with the minimum value being -12.87 pF at 0.1 GHz.

Cuvinte-cheie
2D materials ferroelectricity, ferroelectrics, microwaves, RF magnetron sputtering, Semiconductors, thin films, tin sulfide