The best thermoelectric materials are believed to be topological insulators semiconductor Bi2Te3 and Bi1-xSbx at 300K and 80K corresponding. To improve the figure of merit ZT=S2T/(e +l) the development of new concepts - low-dimensional structures [1] and topological insulators [2] have been made. The improvement figure of merit was predicted to result either from confinement-induced increased electron density of states near the Fermi level EF or reduction in Kl due to the phonon—boundary scattering or modification of the phonon spectrum. Perfect monocrystalline of Bi2Te3 layers and Bi1-xSbx with thickness 10-20 μm were prepared using the mechanical exfoliate method by cleaving thin layer from bulk single crystal Bi2Te3 samples. X- ray diffraction studies showed that the Bi2Te3 layers were single- crystal and the plane of the layers was perpendicular to the C3 trigonal axis. The micro wire in glass coating were prepared by the Ulitovsky-Taylor method. Using p- and n- type layers as n- and p- lags in thermos element we received △T= 4˚ at 300 K on cross- section 1*10-4 cm2. Applying a segmentation method (5- thermos element - increasing cross- section only to value 5*10-4 cm2) we received △T=8-9˚C. It is known that an increase in the temperature of the micro- sensor by 10˚ leads to a twofold decrease the sensor durability. Our experimental samples the thermoelectric micro- coolers with efficient cooling capacity, small areas, short response time and with reproducible engineering techniques are in high demand on the telecommunication markets of the future.