| Conţinutul numărului revistei |
| Articolul precedent |
| Articolul urmator |
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 819 2 |
| Ultima descărcare din IBN: 2018-07-18 15:47 |
| Căutarea după subiecte similare conform CZU |
| 621.315.592:621.382 (3) |
| Electrotehnică (1154) |
 SM ISO690:2012RUSANOVSCHI, Vitalie. Acţiunea iradierii ionizante asupra oxidului structurilor MOS
. In: Intellectus, 2002, nr. 4, pp. 58-62. ISSN 1810-7079. |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
| Intellectus | ||||||
| Numărul 4 / 2002 / ISSN 1810-7079 /ISSNe 1810-7087 | ||||||
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| CZU: 621.315.592:621.382 | ||||||
| Pag. 58-62 | ||||||
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 Descarcă PDF |
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| Rezumat | ||||||
T he Integrated Circuits
that are under the ionized
irradiation influence, widely
used in the computer science,
require a deep research of the
active elements in order to
determine the deviation of the
parameters of the elements and
of the integrated circuits under
the ionized irradiation action
and to determine the highest
level of irradiation under
which the elements and the
integrated circuits will function
constantly. |
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