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Articolul precedent |
Articolul urmator |
800 9 |
Ultima descărcare din IBN: 2023-12-19 00:57 |
Căutarea după subiecte similare conform CZU |
621.382:621.315.592 (2) |
Electrotehnică (1154) |
SM ISO690:2012 NAZAROV, Mihail. Defectoscopia catodoluminescenta a semiconductorilor II-VI
. In: Intellectus, 2002, nr. 1, pp. 33-37. ISSN 1810-7079. |
EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
Intellectus | ||||||
Numărul 1 / 2002 / ISSN 1810-7079 /ISSNe 1810-7087 | ||||||
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CZU: 621.382:621.315.592 | ||||||
Pag. 33-37 | ||||||
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Rezumat | ||||||
C ontrol of defect distribution requires a measurement method
capable of investigating the defects on a micrometer scale. The
proposed method of cathodoluminescence surveys some of the opportunities
for the control of the defects in semiconductors by using a combination of
different cathodoluminescence (CL) modes including colour
cathodoluminescence (CCL) in the scanning electron microscopy (SEM) with
computer graphics. Several design improvements including a composite
CCL BSE-contrast in the SEM should help researchers and users better
understand how annealing at different thermal environments affects the
optical characteristics of materials.
The method of cathodoluminescence defectoscopy was applied to microcharacterization
of commercial wide-band-gap A2B6 semiconductors (ZnS,
ZnSe) as well to the thin diffusion layers formed in these materials in
processes of annealing. The host crystals were annealed in different melts:
Al, Sb, Bi and Bi BiCl3 at 1200 K for 100 h with a subsequent tempering in
air. In result, a complex characterization of subsurface diffusion layers
formed in the annealed crystals has been achieved. It has been established
that the process of annealing in the above-mentioned melts leads to a spatial
redistribution of the impurity-defects by an extremely irregular way. The CCL
image reveals also a good correlation with the CL and PL spectra recorded
in different points of sample. |
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