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SM ISO690:2012 POSTICA, Vasile. Electrical Characterization of Individual Boron Nitride Nanowall Structures. In: Nanotechnologies and Biomedical Engineering, Ed. 5, 3-5 noiembrie 2021, Chişinău. Chişinău: Pontos, 2021, Ediția 5, p. 61. ISBN 978-9975-72-592-7. |
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Nanotechnologies and Biomedical Engineering Ediția 5, 2021 |
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Conferința "Nanotechnologies and Biomedical Engineering" 5, Chişinău, Moldova, 3-5 noiembrie 2021 | ||||||
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Pag. 61-61 | ||||||
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In this work, the individual hexagonal boron nitride (h-BN) microtubular structures with different diameter (ranging from ≈ 0.2 to ≈ 2.5 μm) and a wall thickness below 25 nm were investigated for the first time by integration on SiO2/Si substrate using a method based on focused ion beam deposition (FIB/SEM). The current-voltage (I-V) measurements were carried out in from a bias of - 40 V to + 40 V and in a temperature range from 25 to 100 °C. All fabricated devices showed excellent insulating properties and the resistance of ≈ 111 GΩ was calculated, which was attributed mainly to the top SiO2 layer of the substrate measured without h-BN. The obtained results elucidate the excellent potential of the boron nitride microtubular structures with nanowalls to be used as high-quality shielding materials of other nano- and microstructures for application in nanoelectronics, nanophotonics and power electronics, where a relatively wide range of operating temperature is necessary. |
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