Low-Cost ITO/n-Si Solar Cells with Increased Sensitivity in UV Spectrum Range
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SIMASHKEVICH, Aleksey, SHEVCHENKO, Gvidona P., BOKSHITS, Yu., BRUC, Leonid, CARAMAN, Mihail, DEMENTIEV, Igor, GOGLIDZE, Tatiana, CURMEI, Nicolai, SHERBAN, Dormidont. Low-Cost ITO/n-Si Solar Cells with Increased Sensitivity in UV Spectrum Range. In: Surface Engineering and Applied Electrochemistry, 2021, nr. 3(57), pp. 315-322. ISSN 1068-3755. DOI: https://doi.org/10.3103/S1068375521030133
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Surface Engineering and Applied Electrochemistry
Numărul 3(57) / 2021 / ISSN 1068-3755 /ISSNe 1934-8002

Low-Cost ITO/n-Si Solar Cells with Increased Sensitivity in UV Spectrum Range

DOI: https://doi.org/10.3103/S1068375521030133

Pag. 315-322

Simashkevich Aleksey1, Shevchenko Gvidona P.2, Bokshits Yu.2, Bruc Leonid1, Caraman Mihail3, Dementiev Igor3, Goglidze Tatiana3, Curmei Nicolai1, Sherban Dormidont1
 
1 Institute of Applied Physics,
2 Research Institute for Physical Chemical Problems, Belarusian State University,
3 Moldova State University
 
Disponibil în IBN: 17 august 2021


Rezumat

The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus, the formation by this method of the thin layers with a thickness of about ~1 nm is demonstrated, which allows to obtain a photovoltaic conversion efficiency up to 15.3%. By depositing the luminescent layer on the front side of the ITO/c-Si junctions, which is active in the region of the solar cells sensitivity to the action of UV irradiation, their functionality in the range of 300–1100 nm of the solar spectrum is demonstrated. 

Cuvinte-cheie
composite interface, ITO junction luminescence sensitivity silicon, UV wafers