Conţinutul numărului revistei |
Articolul precedent |
Articolul urmator |
441 0 |
Căutarea după subiecte similare conform CZU |
535.3+538.9+54 (1) |
Propagare. Reflecţie. Refracţie. Absorbţie. Emisie (99) |
Fizica materiei condensate. Fizica solidului (349) |
Chimie. Cristalografie. Mineralogie (2025) |
SM ISO690:2012 LIANG, Akun, SHI, Lanting, GALLEGO-PARRA, Samuel, GOMIS, Oscar, ERRANDONEA, Daniel J.H., TIGINYANU, Ion, URSACHI, Veaceslav, MANJON, Francisco Javier. Pressure-induced band anticrossing in two adamantine ordered-vacancy compounds: CdGa2S4 and HgGa2S4. In: Journal of Alloys and Compounds, 2021, vol. 886, p. 0. ISSN 0925-8388. DOI: https://doi.org/10.1016/j.jallcom.2021.161226 |
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Journal of Alloys and Compounds | |||||||
Volumul 886 / 2021 / ISSN 0925-8388 | |||||||
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DOI:https://doi.org/10.1016/j.jallcom.2021.161226 | |||||||
CZU: 535.3+538.9+54 | |||||||
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This paper reports a joint experimental and theoretical study of the electronic band structure of two ordered-vacancy compounds with defect-chalcopyrite structure: CdGa2S4 and HgGa2S4. High-pressure optical-absorption experiments (up to around 17 GPa) combined with first-principles electronic band-structure calculations provide compelling evidence of strong nonlinear pressure dependence of the bandgap in both compounds. The nonlinear pressure dependence is well accounted for by the band anticrossing model that was previously established mostly for selenides with defect chalcopyrite structure. Therefore, our results on two sulfides with defect chalcopyrite structure under compression provide definitive evidence that the nonlinear pressure dependence of the direct bandgap is a common feature of adamantine ordered-vacancy compounds and does not depend on the type of anion. |
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Cuvinte-cheie Band anticrossing, bandgap, First-principles calculations, High pressure, Optical absorption experiment, Ordered-vacancy compounds |
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