Comparative analysis of linearization techniques when modeling nonlinear processes in semiconductor devices
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2021-11-19 23:48
SM ISO690:2012
SPRINCEAN, Galina. Comparative analysis of linearization techniques when modeling nonlinear processes in semiconductor devices. In: Mathematics and IT: Research and Education. 1-3 iulie 2021, Chişinău. Chișinău, Republica Moldova: 2021, p. 80.
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Mathematics and IT: Research and Education 2021
Conferința "Mathematics and IT: Research and Education "
Chişinău, Moldova, 1-3 iulie 2021

Comparative analysis of linearization techniques when modeling nonlinear processes in semiconductor devices


Pag. 80-80

Sprincean Galina
 
State University of Moldova
 
Disponibil în IBN: 1 iulie 2021


Rezumat

The mathematical model of investigated problem [1, 2] represents the system of nonlinear differential equations with respect to unknown functions that are electrostatic potential, electron concentration and holes concentration. The problem is significantly complicated by the fact that the boundary conditions are inhomogeneous: on a part of the boundary the Dirichlet conditions are specified, and on the other part – the Neumann conditions. One of the most important points in the numerical solution of this problem is the problem of choosing a suitable method for linearizing the given differential equations. For this purpose, we use two different approaches: Newton’s and Gummel’s algorithms [2]. Then the obtained linear system is solved numerically by applying the conjugate and bi-conjugate gradient methods. Numerical experiments were carried out on the basis of these two techniques. The obtained numerical solutions made it possible to compare the considered methods and to draw preliminary conclusions about the possibilities of their application.