CPPP 21 P Electron tunneling through ferroelectric/manganite junction observed by optical second harmonic generation
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IVANOV, M., MISHINA, E., MOROZOV, V.. CPPP 21 P Electron tunneling through ferroelectric/manganite junction observed by optical second harmonic generation. In: Materials Science and Condensed Matter Physics, 13-17 septembrie 2010, Chișinău. Chișinău, Republica Moldova: Institutul de Fizică Aplicată, 2010, Editia 5, p. 148.
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Materials Science and Condensed Matter Physics
Editia 5, 2010
Conferința "Materials Science and Condensed Matter Physics"
Chișinău, Moldova, 13-17 septembrie 2010

CPPP 21 P Electron tunneling through ferroelectric/manganite junction observed by optical second harmonic generation


Pag. 148-148

Ivanov M., Mishina E., Morozov V.
 
Moscow State Institute of Radioengineering, Electronics and Automation
 
Disponibil în IBN: 16 aprilie 2021


Rezumat

Ferroelectric-ferromagnetic multilayers may exhibit attractive functionalities caused by interactions between electric polarization and magnetization. Magnetism and ferroelectricity are involved with local spins and off-centre structural distortions, respectively. For example, electric polarization could be induced by an external magnetic field, and magnetization could be adjusted by an external electric field. Such phenomena are referred to as arising from the magneto-electric effect and can coexist in certain unusual materials, which are called multiferroics. Due to observation of spin-dependant electron tunneling in ferroelectric and multiferroic junctions, multiferroics have attracted much attention as the systems with exciting fundamental physics which can be used for realizing next-generation multifunctional devices used in information storage, spintronic, and sensors. Here we report the temperature dependences of electric-field induced optical second harmonic generation (SHG) as well as electric current and conductivity were studied in a La0.7Ca0.25MnO3/BaTiO3 (LCMO/BTO) heterostructures. Two ranges of applied electric field reveal different behavior of optical and electrical parameters. For low fields, the current shows ohmic behavior accompanied by ferroelectric polarization induced SHG-voltage dependence with hysteresis. For high field, exponential growth of SHG signal (Fig.1) indicates the tunneling current through thin ferroelectric layer, which can be modeled by Sommerfeld-Bethe method. Although in BTO the ferroelectric phase exists at all measured temperatures, in both cases strong SHG is only observed for temperatures below the metal/insulator phase transition of LCMO. The electric- and magnetic-field-induced SHG were studied in the temperature range below paraferromagnetic and insulator-metal transitions. We suppose, that the observed effect appears due to the following mechanisms: 1) Ferroelectric polarization appear due to the in-plane electric field in ferroelectric layer as a result of strong current along the ferromagnetic layer; 2) Direct current contribution in the nonlinear polarization.figureFig.1 Dependence on applied voltage of the SHG intensity (points) at different temperatures