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 SM ISO690:2012SIMASHKEVICH, Aleksey, ULYASHIN, Alexander G., THOGERSEN, Annett, SHEVCHENKO, Gvidona P., BOKSHITS, Yu., BRUC, Leonid, CARAMAN, Mihail, DEMENTIEV, Igor, GOGLIDZE, Tatiana, CURMEI, Nicolai, SHERBAN, Dormidont. Functional ITO/c-Si heterojunction in the solar radiation spectrum range of 300-1100 nm. In: Proceedings of the International Semiconductor Conference: CAS, Ed. 43, 7-9 octombrie 2020, Sinaia. New Jersey, USA: Institute of Electrical and Electronics Engineers Inc., 2020, Ediția 43, pp. 73-76. ISBN 978-172811073-8. DOI: https://doi.org/10.1109/CAS50358.2020.9268027 |
| EXPORT metadate: Google Scholar Crossref CERIF DataCite Dublin Core |
 Proceedings of the International Semiconductor Conference Ediția 43, 2020 |
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Conferința "43rd International Semiconductor Conference" 43, Sinaia, Romania, 7-9 octombrie 2020 | |
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| DOI:https://doi.org/10.1109/CAS50358.2020.9268027 | |
| Pag. 73-76 | |
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| Rezumat | |
The results regarding formation of ITO/c-Si junctions interface through the oxidation of the silicon wafer are described. Thus the formation by this method of the thin layers SiOx with a thickness of about ~1nm is demonstrated, which allows obtaining photovoltaic conversion efficiency up to 15.3%. By depositing the luminescent layer on the front side of the ITO/c-Si junctions, which is active in the region of the solar cells sensitivity to the action of UV irradiation, their functionality in the range of 300 - 1100nm of the solar spectrum is demonstrated. |
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| Cuvinte-cheie Heterojunctions, irradiation, Silicon compounds, silicon wafers, solar radiation |
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